Vertical bit line wide band gap TFT decoder

ABSTRACT

A 3D memory array having a vertically oriented thin film transistor (TFT) selection device that has a body formed from a wide energy band gap semiconductor is disclosed. The wide energy band gap semiconductor may be an oxide semiconductor, such as a metal oxide semiconductor. As examples, this could be an InGaZnO, InZnO, HfInZnO, or ZnInSnO body. The source and drains can also be formed from the wide energy band gap semiconductor, although these may be doped for better conduction. The vertically oriented TFT selection device serves as a vertical bit line selection device in the 3D memory array. A vertical TFT select device has a high drive current, a high breakdown voltage and low leakage current.

CLAIM OF PRIORITY

This application is a divisional application of U.S. patent applicationSer. No. 14/020,647, entitled “VERTICAL BIT LINE WIDE BAND GAP TFTDECODER,” by Rabkin et al., filed Sep. 6, 2013, published as US2015/0069320 on Mar. 12, 2015 and issued as U.S. Pat. No. 9,105,468 onAug. 11, 2015) incorporated by reference herein in its entirety.

BACKGROUND

The present disclosure relates to technology for non-volatile storage.

One example of non-volatile memory uses variable resistance memoryelements that may be set to either low or high resistance states. Uponapplication of sufficient voltage, current, or other stimulus, thevariable resistance memory element switches to a stable low-resistancestate, which is sometimes referred to as SETTING the device. Thisresistivity-switching is reversible such that subsequent application ofan appropriate voltage, current, or other stimulus can serve to returnthe reversible resistivity-switching material to a stablehigh-resistance state, which is sometimes referred to as RESETTING thedevice. This conversion can be repeated many times.

The variable resistance memory elements may be in a high resistancestate when first manufactured. This may be referred to as the “virginstate.” In the virgin state, the resistance could be even higher thanfor the RESET state. The term “FORMING” is typically used to describeputting the variable resistance memory elements into a lower resistancestate for the first time. For some memory elements, the FORMINGoperation requires a higher voltage than the SET and/or RESEToperations.

3D memory arrays having variable resistance memory elements have beenproposed. In one possible architecture, word lines extend horizontallyand bit lines extend vertically. There a multiple levels of the wordlines, hence multiple levels of memory elements. Each memory element islocated between one of the vertical bit lines and one of the horizontalword lines. During operation, some of the memory cells are selected forthe SET, RESET, or FORM operation, while others are unselected.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an equivalent circuit of a portion of an examplethree-dimensional array of variable resistance memory elements, whereinthe array has vertical bit lines.

FIG. 2 is a schematic block diagram of a re-programmable non-volatilememory system which utilizes the memory array of FIG. 1, and whichindicates connection of the memory system with a host system.

FIG. 3 provides plan views of the two planes and substrate of thethree-dimensional array of FIG. 1, with some structure added.

FIG. 4 is an expanded view of a portion of one of the planes of FIG. 3,annotated to show effects of programming data therein.

FIG. 5 is an expanded view of a portion of one of the planes of FIG. 3,annotated to show effects of reading data therefrom.

FIG. 6 is an isometric view of a portion of the three-dimensional arrayshown in FIG. 1 according to a first specific example of animplementation thereof.

FIG. 7 is an equivalent circuit of a portion of an examplethree-dimensional array of variable resistance memory elements, whereinthe array has vertical bit lines and a pillar select layer, both ofwhich are above (and not in) the substrate.

FIG. 8A is a schematic that depicts a vertical bit line, a verticallyoriented select device and a global bit line.

FIG. 8B is a plan view that depicts a vertical bit line, a verticallyoriented select device and a global bit line.

FIG. 9 is a schematic of a portion of the memory system, depictingvertical bit lines above the substrate, vertically oriented selectdevices above the substrate and row select line drivers in thesubstrate.

FIG. 10 is a schematic diagram to illustrate some of the concernspertaining to a selection device.

FIG. 11A depict one embodiment of a vertical TFT selection device.

FIG. 11B1 depicts one embodiment of vertical TFT selection device thatis N+/n/N+.

FIG. 11B2 depicts one embodiment of vertical TFT selection device thatis P+/p/P+.

FIG. 11B3 depicts one embodiment of vertical TFT selection device thatis N+/p/N+.

FIG. 11B4 depicts one embodiment of vertical TFT selection device thatis P+/n/P+.

FIG. 11B5 depicts one embodiment of vertical TFT selection device thatis metal-wide band gap semiconductor-metal.

FIGS. 11C-11F depict various embodiments of vertical TFT selectiondevices with channel extensions.

FIG. 11G depicts a perspective view of one embodiment of a vertical TFTselection device.

FIG. 12A is a cross-sectional view of a memory structure using oneembodiment of a vertically oriented TFT select device and the memorystructure of FIG. 6.

FIG. 12B is a cross-sectional view of another embodiment of a memorystructure using the vertically oriented TFT select device and the memorystructure of FIG. 6.

FIG. 12C is a cross-sectional view of another embodiment of a memorystructure using the vertically oriented TFT select device and the memorystructure of FIG. 6.

FIG. 13 is a schematic of a portion of the memory system, depictingvertical bit lines and vertically oriented select devices above thesubstrate.

FIG. 14 is a schematic of a portion of the memory system, depictingvertical bit lines, vertically oriented select devices above thesubstrate and row select line drivers in the substrate.

FIG. 15A is a flow chart describing one embodiment of a process forfabricating the structure of FIG. 12B.

FIG. 15B is a flow chart describing one embodiment of a process forfabricating the structure.

FIGS. 16A-16H depict the structure of FIG. 12B during the process ofFIG. 15A.

FIGS. 17A-17F depict the structure being formed during the process ofFIG. 15B.

FIG. 18 is a flow chart describing one embodiment of a process foroperating a 3D memory array having a vertical TFT selection device.

DETAILED DESCRIPTION

The technology described herein is directed to a 3D memory array havinga vertically oriented thin film transistor (TFT) selection device. Thememory elements may be variable resistance memory elements. In oneembodiment, the body of the TFT is formed from a wide band gapsemiconductor. Herein, a “wide band gap semiconductor” is defined as anysemiconductor that has an energy band gap that is wider than silicon.Silicon may have an energy band gap of about 1.1 eV. Some wide band gapsemiconductors may have an energy band gap of about 3 eV or greater.However, the wide band gap semiconductor could have an energy band gapthat is less than 3 eV. The wider the energy band gap, the higher thecritical field. This means that breakdown voltage may be larger for thesame size device, relative to silicon.

In one embodiment, the body (as well as source and drain) of the TFT isformed from an oxide semiconductor. The oxide semiconductor may be ametal oxide semiconductor. As one example, the body could be InGaZnO.Other examples include, but are not limited to, InZnO, HfInZnO, ZrInZnO,and ZnInSnO. Thus, the wide band gap semiconductor for the body may bean oxide semiconductor, a metal oxide semiconductor, etc.

A vertically oriented thin film transistor (TFT) selection device of oneembodiment has high drive current, low leakage current, and highbreakdown voltage. The transistor height can be made small while stillmeeting requirements such as the foregoing. The aspect ratio of ahole/trench used to form the transistor can be small while still meetingrequirements such as the foregoing. Also, transistor uniformity is good.Moreover, good tradeoffs can be made between the various requirements.For example, breakdown voltage can be made high without undulysacrificing on current.

Note that requirements such as the foregoing can be difficult to meetwith a polysilicon body TFT. This may be due to the effect ofpolysilicon crystal grains and grain boundaries that increase leakage,reduce breakdown voltage, reduce mobility and drive current, and mayalso introduce high variability of device parameters.

Memory elements in a 3D memory array may be controlled by applying theproper voltages to their vertical bit lines and word lines. By applyingeither a select voltage or an unselect voltage to the vertical bitlines, while applying either a select voltage or an unselect voltage tothe horizontal word lines, memory cells are selected/unselected for theoperation (e.g., SET, RESET, and FORM). The vertically oriented TFTdecoder provides the proper voltage to the vertical bit line.

It is important that unselected memory elements remain unselected.Selection of the vertically oriented bit lines themselves is achieved bya vertical TFT have a body formed from a wide band gap semiconductor, inone embodiment. The wide band gap semiconductor for the body may be anoxide semiconductor, a metal oxide semiconductor, etc. Typically, someof the vertical TFTs are turned on to select memory elements, whileother vertical TFTs are kept off to keep other memory elementsunselected. In this manner the vertical TFTs provide suitable voltagesto the vertically oriented bit lines. Word lines are driven withsuitable voltages, as well.

One potential problem with the transistor that selects the verticallyoriented bit lines is that the transistor may not have a sufficientlyhigh breakdown voltage. If a transistor selection device that issupposed to be off breaks down, then the transistor could apply anunintended voltage to the vertically oriented bit line. Thus, having ahigh breakdown voltage is an important characteristic. This can beespecially important when performing a FORMING operation, although ahigh breakdown voltage may also benefit SET and RESET operations.

Even if the transistor that is supposed to be off is not in a breakdownregime, but has high leakage current, it can pass an unintended voltageto the vertically oriented bit line. The higher the leakage the fasterthe unintended voltage can pass to the bit line (the faster the verticalbit line can be charged up).

The transistor leakage can have several components, such as source-drainleakage and leakage related to carrier generation due to high electricfield, such as band-to-band generation, trap-assisted generation, etc.All components of the leakage will represent transistor current in theoff state—Ioff. For instance, when the gate to drain potentialdifference is high enough, band-to-band generation may occur, resultingin increased leakage. This is sometimes is referred to as GIDL—gateinduced drain leakage.

High gate to drain potential difference also results in high electricfield component in the direction perpendicular to the gate dielectric(perpendicular to the direction of channel) contributing to overallelectric field increase. The total electric field at the gate/drain edgeis then determined by the lateral, or along the channel, field component(dependent on source to drain bias) and the perpendicular to the channelcomponent of the field. When total field is high enough (i.e., voltageshigh enough), this can trigger impact ionization-generation andbreakdown.

If the applied voltage (e.g., drain to source potential difference) isapproaching breakdown voltage, the leakage rapidly increases. Thereforeif transistor breakdown voltage is increased, the leakage is lower forthe same applied voltage(s). Therefore it is important to be able toincrease the voltage at which breakdown occurs.

Also it is important to reduce GIDL, which is dependent on gate to drainpotential difference.

Sometimes, I_(off) current can be reduced by making a transistor bigger,e.g., increasing transistor channel length. However, this may result inlower drive current (I_(on)). For vertical bit line applications it isimportant for the TFT to deliver high enough I_(on) because the ReRAMmemory cell often requires high enough current to switch from SET toRESET and/or vice versa. High I_(on) may also be required for FORMINGoperation.

Another problem of bigger channel length is the transistor may becomebigger. By bigger in the context of a vertically oriented selecteddevice, this means that the TFT is higher. In other words, the aspectratio (height over body thickness ratio) will increase, which could makeit more difficult to fabricate the TFT.

Therefore, it is important to be able to optimize transistor parametersfor the best combination or trade-offs for I_(on), I_(off)/leakage andbreakdown voltage in order to allow efficient operation of the selectordevice. Also, the smaller the channel length (in this context thevertical size of the transistor), the better it is from process point ofview (lower aspect ratio).

In one embodiment, the vertical TFT having a wide energy band gapsemiconductor body is used as a bit line selection device in athree-dimensional array of memory elements wherein bit lines of thearray are oriented vertically. That is, instead of merely stacking aplurality of two-dimensional arrays on a common semiconductor substrate,where each two-dimensional array has its own bit lines, multipletwo-dimensional arrays are stacked on top of each other in separateplanes but then share common bit lines that extend up through theplanes.

The memory elements used in the three-dimensional array are variableresistive memory elements, in one embodiment. That is, the resistance(and thus inversely the conductance) of the individual memory elementsis typically changed as a result of a voltage placed across theorthogonally intersecting conductors to which the memory element isconnected. Depending on the type of variable resistive element, thestate may change in response to a voltage across it, a level of currentthrough it, an amount of electric field across it, a level of heatapplied to it, and the like. With some variable resistive elementmaterial, it is the amount of time that the voltage, current, electricfield, heat and/or the like is applied to the element that determineswhen its conductive state changes and the direction in which the changetakes place. In between such state changing operations, the resistanceof the memory element remains unchanged, so is non-volatile. Thethree-dimensional array architecture summarized above may be implementedwith a memory element material selected from a wide variety of suchmaterials having different properties and operating characteristics.

The resistance of the memory element, and thus its detectable storagestate, can be repetitively set from an initial level to another leveland then re-set back to the initial level. For some materials, theamount or duration of the voltage, current, electric field, heat and thelike applied to change its state in one direction is different(asymmetrical) with that applied to change in another direction. Withtwo detectable states, each memory element stores one-bit of data. Withthe use of some materials, more than one bit of data may be stored ineach memory element by designating more than two stable levels ofresistance as detectable states of the memory element. Thethree-dimensional array architecture herein is quite versatile in theway it may be operated.

This three-dimensional architecture also allows limiting the extent andnumber of unaddressed (non-selected) resistive memory elements acrosswhich an undesired level of voltage is applied during reading andprogramming operations conducted on other addressed (selected) memoryelements. The risk of disturbing the states of unaddressed memoryelements and the levels of leakage current passing through unaddressedelements may be significantly reduced from those experienced in otherarrays using the same memory element material. Leakage currents areundesirable because they can alter the apparent currents being read fromaddressed memory elements, thereby making it difficult to accuratelyread the states of addressed (selected) memory elements. Leakagecurrents are also undesirable because they add to the overall power drawby an array and therefore undesirably causes the power supply to have tobe made larger than is desirable. Because of the relatively small extentof unaddressed memory elements that have voltages applied duringprogramming and reading of addressed memory elements, the array with thethree-dimensional architecture herein may be made to include a muchlarger number of addressed memory elements without introducing errors inreading and exceeding reasonable power supply capabilities. A verticalTFT having a wide energy band gap semiconductor body, in accordance withone embodiment, that selects vertical bit lines has a low leakagecurrent.

In addition, the three-dimensional architecture herein allows variableresistance memory elements to be connected at orthogonal crossings ofbit and word line conductors without the need for diodes or othernon-linear elements being connected in series with the variableresistive elements. In some 3D arrays of variable resistance memoryelements, a diode is connected in series with each memory element inorder to reduce the leakage current though the element when it isunselected but nevertheless has a voltage difference placed across it,such as can occur when the unselected memory element is connected to abit or word line carrying voltages to selected memory elements connectedto those same lines. The absence of the need for diodes significantlyreduces the complexity of the array and thus the number of processingsteps required to manufacture it. The term “connected” refers to directand indirect connections.

Indeed, the manufacture of the three-dimensional array of memoryelements herein is much simpler than other three-dimensional arraysusing the same type of memory elements. In particular, a fewer number ofmasks is required to form the elements of each plane of the array. Thetotal number of processing steps needed to form integrated circuits withthe three-dimensional array are thus reduced, as is the cost of theresulting integrated circuit.

Referring initially to FIG. 1, an architecture of one embodiment of athree-dimensional memory 10 is schematically and generally illustratedin the form of an equivalent circuit of a portion of such a memory. Astandard three-dimensional rectangular coordinate system 11 is used forreference, the directions of each of vectors x, y and z being orthogonalwith the other two. In another embodiment direction x and x aresubstantially 60 degrees from each other.

A circuit for selectively connecting internal memory elements withexternal data circuits is preferably formed using select devices Q_(xy),where x gives a relative position of the device in the x-direction and yits relative position in the y-direction. The individual select devicesQ_(xy) are vertical TFTs having a channel extension, in accordance withembodiments. Global bit lines (GBL_(x)) are elongated in the y-directionand have relative positions in the x-direction that are indicated by thesubscript. The global bit lines (GBL_(x)) are individually connectablewith the source or drain of the vertical TFT select devices Q_(xy)having the same position in the x-direction, although during reading andalso typically programming only one select device connected with aspecific global bit line is turned on at time. The other of the sourceor drain of the individual select devices Q_(xy) is connected with oneof the local bit lines (LBL_(xy)). The local bit lines are elongatedvertically, in the z-direction, and form a regular two-dimensional arrayin the x (row) and y (column) directions.

In order to connect one set (in this example, designated as one row) oflocal bit lines with corresponding global bit lines, row select linesSG_(y) are elongated in the x-direction and connect with controlterminals (gates) of a single row of vertical TFT select devices Q_(xy)having a common position in the y-direction. In one embodiment, the TFTselect devices have a wide energy band gap semiconductor body. Thesource and drain may also be formed from the wide energy band gapsemiconductor. The wide energy band gap semiconductor may be an oxidesemiconductor, a metal oxide semiconductor, etc.

The vertical TFT select devices Q_(xy) therefore connect one row oflocal bit lines (LBL_(xy)) across the x-direction (having the sameposition in the y-direction) at a time to corresponding ones of theglobal bit-lines (GBL_(x)), depending upon which of the row select linesSG_(y) receives a voltage that turns on the vertical TFT select devicesto which it is connected. The remaining row select lines receivevoltages that keep their connected vertical TFT select devices Q_(xy)off. It may be noted that since only one vertical TFT select device(Q_(xy)) is used with each of the local bit lines (LBL_(xy)), the pitchof the array across the semiconductor substrate in both x andy-directions may be made very small, and thus the density of the memorystorage elements large.

The vertical TFT select devices Q_(xy) have channel extensions(otherwise referred to as gate/junction offsets). The channel extensionimproves performance characteristic, such as breakdown voltage and GateInduced Drain Leakage (GIDL). This helps to keep the vertical TFT selectdevice off, when it should be off. It also helps keep leakage currentlow.

Memory elements M_(zxy) are formed in a plurality of planes positionedat different distances in the z-direction above a substrate (which maybe below the pillar select layer). Two planes 1 and 2 are illustrated inFIG. 1 but there will typically be more, such as 4, 6, 8, 16, 32, oreven more. In each plane at distance z, word lines WL_(zy) are elongatedin the x-direction and spaced apart in the y-direction between the localbit-lines (LBL_(xy)). The word lines WL_(zy) of each plane individuallycross adjacent two of the local bit-lines LBL_(xy) on either side of theword lines. The individual memory storage elements M_(zxy) are connectedbetween one local bit line LBL_(xy) and one word line WL_(zy) adjacentthese individual crossings. An individual memory element M_(zxy) istherefore addressable by placing proper voltages on the local bit lineLBL_(xy) and word line WL_(zy) between which the memory element isconnected. The voltages are chosen to provide the electrical stimulusnecessary to cause the state of the memory element to change from anexisting state to the desired new state. After the device is firstfabricated, voltages may be selected to provide the electrical stimulusnecessary to “FORM” the memory element, which refers to lowering itsresistance from a virgin state. The levels, duration and othercharacteristics of these voltages depend upon the material that is usedfor the memory elements.

Each “plane” of the three-dimensional memory structure is typicallyformed of at least two layers, one in which the conductive word linesWL_(zy) are positioned and another of a dielectric material thatelectrically isolates the planes from each other. Additional layers mayalso be present in each plane, depending for example on the structure ofthe memory elements M_(zxy). The planes are stacked on top of each otherabove a semiconductor substrate with the local bit lines LBL_(xy) beingconnected with storage elements M_(zxy) of each plane through which thelocal bit lines extend.

The memory arrays described herein, including memory 10, may bemonolithic three dimensional memory arrays. A monolithic threedimensional memory array is one in which multiple memory levels areformed above (and not in) a single substrate, such as a wafer, with nointervening substrates. The layers forming one memory level aredeposited or grown directly over the layers of an existing level orlevels. In contrast, stacked memories have been constructed by formingmemory levels on separate substrates and adhering the memory levels atopeach other, as in Leedy, U.S. Pat. No. 5,915,167, “Three DimensionalStructure Memory.” The substrates may be thinned or removed from thememory levels before bonding, but as the memory levels are initiallyformed over separate substrates, such memories are not true monolithicthree dimensional memory arrays.

FIG. 2 is a block diagram of an illustrative memory system that can usethe three-dimensional memory 10 of FIG. 1. Data input-output circuits 21are connected to provide (during programming) and receive (duringreading) analog electrical quantities in parallel over the globalbit-lines GBL_(x) of FIG. 1 that are representative of data stored inaddressed memory elements M_(zxy). Data input-output circuits 21typically contain sense amplifiers for converting these electricalquantities into digital data values during reading, which digital valuesare then conveyed over lines 23 to a memory system controller 25.Conversely, data to be programmed into the array 10 are sent by thecontroller 25 to the input-output circuits 21, which then programs thatdata into addressed memory element by placing proper voltages on theglobal bit lines GBL_(x). For binary operation, one voltage level istypically placed on a global bit line to represent a binary “1” andanother voltage level to represent a binary “0”. The memory elements areaddressed for reading or programming by voltages placed on the wordlines WL_(zy) and row select lines SG_(y) by respective word line selectcircuits 27 and local bit line circuits 29. In the specificthree-dimensional array of FIG. 1, the memory elements lying between aselected word line and any of the local bit lines LBL_(xy) connected atone instance through the select devices Q_(xy) to the global bit linesGBL_(x) may be addressed for programming or reading by appropriatevoltages being applied through the select circuits 27 and 29.

Controller 25 typically receives data from and sends data to a hostsystem 31. Controller 25 usually contains an amount ofrandom-access-memory (RAM) 34 for temporarily storing such data andoperating information. Commands, status signals and addresses of databeing read or programmed are also exchanged between the controller 25and host 31. The memory system operates with a wide variety of hostsystems. They include personal computers (PCs), laptop and otherportable computers, cellular telephones, personal digital assistants(PDAs), digital still cameras, digital movie cameras and portable audioplayers. The host typically includes a built-in receptacle 33 for one ormore types of memory cards or flash drives that accepts a mating memorysystem plug 35 of the memory system but some hosts require the use ofadapters into which a memory card is plugged, and others require the useof cables therebetween. Alternatively, the memory system may be builtinto the host system as an integral part thereof.

Controller 25 conveys to decoder/driver circuits 37 commands receivedfrom the host 31. Similarly, status signals generated by the memorysystem are communicated to the controller 25 from decoder/drivercircuits 37. The circuits 37 can be simple logic circuits in the casewhere the controller controls nearly all of the memory operations, orcan include a state machine to control at least some of the repetitivememory operations necessary to carry out given commands. Control signalsresulting from decoding commands are applied from the circuits 37 to theword line select circuits 27, local bit line select circuits 29 and datainput-output circuits 21. Also connected to the circuits 27 and 29 areaddress lines 39 from the controller that carry physical addresses ofmemory elements to be accessed within the array 10 in order to carry outa command from the host. The physical addresses correspond to logicaladdresses received from the host system 31, the conversion being made bythe controller 25 and/or the decoder/driver 37. As a result, the localbit line select circuits 29 partially address the designated storageelements within the array 10 by placing proper voltages on the controlelements of the select devices Q_(xy) to connect selected local bitlines (LBL_(xy)) with the global bit lines (GBL_(x)). The addressing iscompleted by the circuits 27 applying proper voltages to the word linesWL_(zy) of the array.

Although each of the memory elements M_(zxy) in the array of FIG. 1 maybe individually addressed for changing its state according to incomingdata or for reading its existing storage state, it may be preferable toprogram and read the array in units of multiple memory elements inparallel. In the three-dimensional array of FIG. 1, one row of memoryelements on one plane may be programmed and read in parallel. The numberof memory elements operated in parallel depends on the number of memoryelements connected to the selected word line. In some arrays, the wordlines may be segmented (not shown in FIG. 1) so that only a portion ofthe total number of memory elements connected along their length may beaddressed for parallel operation, namely the memory elements connectedto a selected one of the segments. In some arrays the number of memoryelements programmed in one operation may be less than the total numberof memory elements connected to the selected word line to minimize IRdrops, to minimize power, or for other reasons.

Previously programmed memory elements whose data have become obsoletemay be addressed and re-programmed from the states in which they werepreviously programmed. The states of the memory elements beingre-programmed in parallel will therefore most often have differentstarting states among them. This is acceptable for many memory elementmaterials but it is may be preferred to re-set a group of memoryelements to a common state before they are re-programmed. For thispurpose, the memory elements may be grouped into blocks, where thememory elements of each block are simultaneously reset to a commonstate, preferably one of the programmed states, in preparation forsubsequently programming them. If the memory element material being usedis characterized by changing from a first to a second state insignificantly less time than it takes to be changed from the secondstate back to the first state, then the reset operation is preferablychosen to cause the transition taking the longer time to be made. Theprogramming is then done faster than resetting. The longer reset time isusually not a problem since resetting blocks of memory elementscontaining nothing but obsolete data is typically accomplished in a highpercentage of the cases in the background, therefore not adverselyimpacting the programming performance of the memory system.

With the use of block re-setting of memory elements, a three-dimensionalarray of variable resistive memory elements may be operated in a mannersimilar to flash memory arrays. Resetting a block of memory elements toa common state corresponds to erasing a block of flash memory elementsto an erased state. The individual blocks of memory elements herein maybe further divided into a plurality of pages of storage elements,wherein the memory elements of a page are programmed and read together.This is like the use of pages in flash memories. The memory elements ofan individual page are programmed and read together. Of course, whenprogramming, those memory elements that are to store data that arerepresented by the reset state are not changed from the reset state.Those of the memory elements of a page that need to be changed toanother state in order to represent the data being stored in them havetheir states changed by the programming operation.

An example of use of such blocks and pages is illustrated in FIG. 3,which provides plan schematic views of planes 1 and 2 of the array ofFIG. 1. The different word lines WL_(zy) that extend across each of theplanes and the local bit lines LBL_(xy) that extend through the planesare shown in two-dimensions. Individual blocks are made up of memoryelements connected to both sides of one word line, or one segment of aword line if the word lines are segmented, in a single one of theplanes. There are therefore a very large number of such blocks in eachplane of the array. In the block illustrated in FIG. 3, each of thememory elements M₁₁₄, M₁₂₄, M₁₃₄, M₁₁₅, M₁₂₅ and M₁₃₅ connected to bothsides of one word line WL₁₂ form the block. Of course, there will bemany more memory elements connected along the length of a word line butonly a few of them are illustrated, for simplicity. The memory elementsof each block are connected between the single word line and differentones of the local bit lines, namely, for the block illustrated in FIG.3, between the word line WL₁₂ and respective local bit lines LBL₁₂,LBL₂₂, LBL₃₂, LBL₁₃, LBL₂₃ and LBL₃₃.

A page is also illustrated in FIG. 3. In the specific embodiment beingdescribed, there are two pages per block. One page is formed by thememory elements along one side of the word line of the block and theother page by the memory elements along the opposite side of the wordline. The example page marked in FIG. 3 is formed by memory elementsM₁₁₄, M₁₂₄ and M₁₃₄. Of course, a page will typically have a very largenumber of memory elements in order to be able to program and read alarge amount of data at one time. Only a few of the storage elements ofthe page of FIG. 3 are included, for simplicity in explanation.

Example resetting, programming (e.g., setting) and reading operations ofthe memory array of FIGS. 1 and 3, when operated as array 10 in thememory system of FIG. 2, will now be described. For these examples, eachof the memory elements M_(zxy) is taken to include a non-volatile memorymaterial that can be switched between two stable states of differentresistance levels by impressing voltages (or currents) of differentpolarity across the memory element, or voltages of the same polarity butdifferent magnitudes and/or duration. For example, one class of materialmay be placed into a high resistance state by passing current in onedirection through the element, and into a low resistance state bypassing current in the other direction through the element. Or, in thecase of switching using the same voltage polarity, one element may needa higher voltage and a shorter time to switch to a high resistance stateand a lower voltage and a longer time to switch to a lower resistancestate. These are the two memory states of the individual memory elementsthat indicate storage of one bit of data, which is either a “0” or a“1,” depending upon the memory element state.

To reset (e.g., erase) a block of memory elements, the memory elementsin that block are placed into their high resistance state. This statewill be designated as the logical data state “1,” following theconvention used in current flash memory arrays but it couldalternatively be designated to be a “0.” As shown by the example in FIG.3, a block includes all the memory elements that are electricallyconnected to one word line WL or segment thereof. A block is thesmallest unit of memory elements in the array that are reset together.It can include thousands of memory elements. If a row of memory elementson one side of a word line includes 1000 of them, for example, a blockwill have 2000 memory elements from the two rows on either side of theword line.

The following steps may be taken to reset all the memory elements of ablock, using the block illustrated in FIG. 3 as an example:

-   -   1. Set all of the global bit lines (GBL₁, GBL₂ and GBL₃ in the        array of FIGS. 1 and 3) to zero volts, by the circuits 21 of        FIG. 2.    -   2. Set at least the two row select lines on either side of the        one word line of the block to H′ volts, so that the local bit        lines on each side of the word line in the y-direction are        connected to their respective global bit lines through their        select devices and therefore brought to zero volts. The voltage        H′ is made high enough to turn on the vertical TFT select        devices Q_(xy), for example, something in a range of 1-6 volts,        typically 3 volts. The block shown in FIG. 3 includes the word        line WL₁₂, so the row select lines SG₂ and SG₃ (FIG. 1) on        either side of that word line are set to H′ volts, by the        circuits 29 of FIG. 2, in order to turn on the vertical TFT        select devices Q₁₂, Q₂₂, Q₃₂, Q₁₃, Q₂₃ and Q₃₃. This causes each        of the local bit lines LBL₁₂, LBL₂₂, LBL₃₂, LBL₁₃, LBL₂₃ and        LBL₃₃ in two adjacent rows extending in the x-direction to be        connected to respective ones of the global bit lines GBL1, GBL2        and GBL3. Two of the local bit lines adjacent to each other in        the y-direction are connected to a single global bit line. Those        local bit lines are then set to the zero volts of the global bit        lines. The remaining local bit lines preferably remain        unconnected and with their voltages floating.    -   3. Set the word line of the block being reset to H volts. This        reset voltage value is dependent on the switching material in        the memory element and can be between a fraction of a volt to a        few volts. All other word lines of the array, including the        other word lines of selected plane 1 and all the word lines on        the other unselected planes, are set to zero volts. In the array        of FIGS. 1 and 3, word line WL₁₂ is placed at H volts, while all        other word lines in the array are placed at zero volts, all by        the circuits 27 of FIG. 2.

The result is that H volts are placed across each of the memory elementsof the block. In the example block of FIG. 3, this includes the memoryelements M₁₁₄, M₁₂₄, M₁₃₄, M₁₁₅, M₁₂₅ and M₁₃₅. For the type of memorymaterial being used as an example, the resulting currents through thesememory elements places any of them not already in a high resistancestate, into that re-set state.

It may be noted that no stray currents will flow because only one wordline has a non-zero voltage. The voltage on the one word line of theblock can cause current to flow to ground only through the memoryelements of the block. There is also nothing that can drive any of theunselected and electrically floating local bit lines to H volts, so novoltage difference will exist across any other memory elements of thearray outside of the block. Therefore no voltages are applied acrossunselected memory elements in other blocks that can cause them to beinadvertently disturbed or reset.

It may also be noted that multiple blocks may be concurrently reset bysetting any combination of word lines and the adjacent select gates to Hor H′ respectively. In this case, the only penalty for doing so is anincrease in the amount of current that is required to simultaneouslyreset an increased number of memory elements. This affects the size ofthe power supply that is required. In some embodiments, less than allmemory elements of a block will be simultaneously reset.

The memory elements of a page are preferably programmed concurrently, inorder to increase the parallelism of the memory system operation. Anexpanded version of the page indicated in FIG. 3 is provided in FIG. 4,with annotations added to illustrate a programming operation. Theindividual memory elements of the page are initially in their resetstate because all the memory elements of its block have previously beenreset. The reset state is taken herein to represent a logical data “1.”For any of these memory elements to store a logical data “0” inaccordance with incoming data being programmed into the page, thosememory elements are switched into their low resistance state, their setstate, while the remaining memory elements of the page remain in thereset state.

For programming a page, only one row of select devices is turned on,resulting in only one row of local bit lines being connected to theglobal bit lines. This connection alternatively allows the memoryelements of both pages of the block to be programmed in two sequentialprogramming cycles, which then makes the number of memory elements inthe reset and programming units equal.

Referring to FIGS. 3 and 4, an example programming operation within theindicated one page of memory elements M₁₁₄, M₁₂₄ and M₁₃₄ is described,as follows:

-   -   1. The voltages placed on the global bit lines are in accordance        with the pattern of data received by the memory system for        programming. In the example of FIG. 4, GBL₁ carries logical data        bit “1”, GBL₂ the logical bit “0” and GBL₃ the logical bit “1.”        The bit lines are set respectively to corresponding voltages M,        H and M, as shown, where the M level voltage is high but not        sufficient to program a memory element and the H level is high        enough to force a memory element into the programmed state. The        M level voltage may be about one-half of the H level voltage,        between zero volts and H. For example, a M level can be 0.7        volt, and a H level can be 1.5 volt. The H level used for        programming is not necessary the same as the H level used for        resetting or reading. In this case, according to the received        data, memory elements M₁₁₄ and M₁₃₄ are to remain in their reset        state, while memory element M₁₂₄ is being programmed. Therefore,        the programming voltages are applied only to memory element M₁₂₄        of this page by the following steps.    -   2. Set the word line of the page being programmed to 0 volts, in        this case selected word line WL₁₂. This is the only word line to        which the memory elements of the page are connected. Each of the        other word lines on all planes is set to the M level. These word        line voltages are applied by the circuits 27 of FIG. 2.    -   3. Set one of the row select lines below and on either side of        the selected word line to the H′ voltage level, in order to        select a page for programming. For the page indicated in FIGS. 3        and 4, the H′ voltage is placed on row select line SG₂ in order        to turn on select devices Q₁₂, Q₂₂ and Q₃₂ (FIG. 1). All other        row select lines, namely lines SG₁ and SG₃ in this example, are        set to 0 volts in order to keep their select devices off. The        row select line voltages are applied by the circuits 29 of        FIG. 2. This connects one row of local bit lines to the global        bit lines and leaves all other local bit lines floating. In this        example, the row of local bit lines LBL₁₂, LBL₂₂ and LBL₃₂ are        connected to the respective global bit lines GBL₁, GBL₂ and GBL₃        through the select devices that are turned on, while all other        local bit lines (LBLs) of the array are left floating.

The result of this operation, for the example memory element materialmentioned above, is that a programming current I_(PROG) is sent throughthe memory element M₁₂₄, thereby causing that memory element to changefrom a reset state to a set (programmed) state. The same will occur withother memory elements (not shown) that are connected between theselected word line WL₁₂ and a local bit line (LBL) that has theprogramming voltage level H applied.

An example of the relative timing of applying the above-listedprogramming voltages is to initially set all the global bit lines(GBLs), the selected row select line (SG), the selected word line andtwo adjacent word lines on either side of the selected word line on theone page all to the voltage level M. After this, selected ones of theGBLs are raised to the voltage level H according to the data beingprogrammed while simultaneously dropping the voltage of the selectedword line to 0 volts for the duration of the programming cycle. The wordlines in plane 1 other than the selected word line WL₁₂ and all wordlines in the unselected other planes can be weakly driven to M, somelower voltage or allowed to float in order to reduce power that must bedelivered by word line drivers that are part of the circuits 27 of FIG.2.

By floating all the local bit lines other than the selected row (in thisexample, all but LBL₁₂, LBL₂₂ and LBL₃₂), voltages can be looselycoupled to outer word lines of the selected plane 1 and word lines ofother planes that are allowed to float through memory elements in theirlow resistance state (programmed) that are connected between thefloating local bit lines and adjacent word lines. These outer word linesof the selected plane and word lines in unselected planes, althoughallowed to float, may eventually be driven up to voltage level M througha combination of programmed memory elements.

There are typically parasitic currents present during the programmingoperation that can increase the currents that must be supplied throughthe selected word line and global bit lines. During programming thereare two sources of parasitic currents, one to the adjacent page in adifferent block and another to the adjacent page in the same block. Anexample of the first is the parasitic current I_(P1) shown on FIG. 4from the local bit line LBL₂₂ that has been raised to the voltage levelH during programming. The memory element M₁₂₃ is connected between thatvoltage and the voltage level M on its word line WL₁₁. This voltagedifference can cause the parasitic current −I_(P1) to flow. Since thereis no such voltage difference between the local bit lines LBL₁₂ or LBL₃₂and the word line WL₁₁, no such parasitic current flows through eitherof the memory elements M₁₁₃ or M₁₃₃, a result of these memory elementsremaining in the reset state according to the data being programmed.

Other parasitic currents can similarly flow from the same local bit lineLBL₂₂ to an adjacent word line in other planes. The presence of thesecurrents may limit the number of planes that can be included in thememory system since the total current may increase with the number ofplanes. The limitation for programming is in the current capacity of thememory power supply, so the maximum number of planes is a tradeoffbetween the size of the power supply and the number of planes. A numberof 4-16 planes may generally be used in most cases, but a differentamount can also be used.

The other source of parasitic currents during programming is to anadjacent page in the same block. The local bit lines that are leftfloating (all but those connected to the row of memory elements beingprogrammed) will tend to be driven to the voltage level M of unselectedword lines through any programmed memory element on any plane. This inturn can cause parasitic currents to flow in the selected plane fromthese local bit lines at the M voltage level to the selected word linethat is at zero volts. An example of this is given by the currentsI_(P2), I_(P3) and I_(P4) shown in FIG. 4. In general, these currentswill be much less than the other parasitic current I_(P1) discussedabove, since these currents flow only through those memory elements intheir conductive state that are adjacent to the selected word line inthe selected plane.

The above-described programming techniques ensure that the selected pageis programmed (local bit lines at H, selected word line at 0) and thatadjacent unselected word lines are at M. As mentioned earlier, otherunselected word lines can be weakly driven to M or initially driven to Mand then left floating. Alternately, word lines in any plane distantfrom the selected word line (for example, more than 5 word lines away)can also be left uncharged (at ground) or floating because the parasiticcurrents flowing to them are so low as to be negligible compared to theidentified parasitic currents since they must flow through a seriescombination of five or more ON devices (devices in their low resistancestate). This can reduce the power dissipation caused by charging a largenumber of word lines.

While the above description assumes that each memory element of the pagebeing programmed will reach its desired ON value with one application ofa programming pulse, a program-verify technique commonly used in NOR orNAND flash memory technology may alternately be used. In this process, acomplete programming operation for a given page includes of a series ofindividual programming operations in which a smaller change in ONresistance occurs within each program operation. Interspersed betweeneach program operation is a verify (read) operation that determineswhether an individual memory element has reached its desired programmedlevel of resistance or conductance consistent with the data beingprogrammed in the memory element. The sequence of program/verify isterminated for each memory element as it is verified to reach thedesired value of resistance or conductance. After all of memory elementsbeing programmed are verified to have reached their desired programmedvalue, programming of the page of memory elements is then completed. Anexample of this technique is described in U.S. Pat. No. 5,172,338.

With reference primarily to FIG. 5, the parallel reading of the statesof a page of memory elements, such as the memory elements M₁₁₄, M₁₂₄ andM₁₃₄, is described. The steps of an example reading process are asfollows:

-   -   1. Set all the global bit lines GBLs and all the word lines WL        to a voltage V_(R). The voltage V_(R) is simply a convenient        reference voltage and can be any number of values but will        typically be between 0 and 1 volt. In general, for operating        modes where repeated reads occur, it is convenient to set all        word lines in the array to V_(R) in order to reduce parasitic        read currents, even though this requires charging all the word        lines. However, as an alternative, it is only necessary to raise        the selected word line (WL₁₂ in FIG. 5), the word line in each        of the other planes that is in the same position as the selected        word line and the immediately adjacent word lines in all planes        to V_(R).    -   2. Turn on one row of select devices by placing a voltage on the        control line adjacent to the selected word line in order to        define the page to be read. In the example of FIGS. 1 and 5, a        voltage is applied to the row select line SG₂ in order to turn        on the vertical TFT select devices Q₁₂, Q₂₂ and Q₃₂. This        connects one row of local bit lines LBL₁₂, LBL₂₂ and LBL₃₂ to        their respective global bit lines GBL₁, GBL₂ and GBL₃. These        local bit lines are then connected to individual sense        amplifiers (SA) that are present in the circuits 21 of FIG. 2,        and assume the potential V_(R) of the global bit lines to which        they are connected. All other local bit lines LBLs are allowed        to float.    -   3. Set the selected word line (WL₁₂) to a voltage of        V_(R)±Vsense. The sign of Vsense is chosen based on the sense        amplifier and has a magnitude of about 0.5 volt. The voltages on        all other word lines remain the same.    -   4. Sense current flowing into (V_(R)+Vsense) or out of        (V_(R)−Vsense) each sense amplifier for time T. These are the        currents I_(R1), I_(R2) and I_(R3) shown to be flowing through        the addressed memory elements of the example of FIG. 5, which        are proportional to the programmed states of the respective        memory elements M₁₁₄, M₁₂₄ and M₁₃₄. The states of the memory        elements M₁₁₄, M₁₂₄ and M₁₃₄ are then given by binary outputs of        the sense amplifiers within the circuits 21 that are connected        to the respective global bit lines GBL₁, GBL₂ and GBL₃. These        sense amplifier outputs are then sent over the lines 23 (FIG. 2)        to the controller 25, which then provides the read data to the        host 31.    -   5. Turn off the vertical TFT select devices (Q₁₂, Q₂₂ and Q₃₂)        by removing the voltage from the row select line (SG₂), in order        to disconnect the local bit lines from the global bit lines, and        return the selected word line (WL₁₂) to the voltage V_(R).

Parasitic currents during such a read operation have two undesirableeffects. As with programming, parasitic currents place increased demandson the memory system power supply. In addition, it is possible forparasitic currents to exist that are erroneously included in thecurrents though the addressed memory elements that are being read. Thiscan therefore lead to erroneous read results if such parasitic currentsare large enough.

As in the programming case, all of the local bit lines except theselected row (LBL₁₂, LBL₂₂ and LBL₃₂ in the example of FIG. 5) arefloating. But the potential of the floating local bit lines may bedriven to V_(R) by any memory element that is in its programmed (lowresistance) state and connected between a floating local bit line and aword line at V_(R), in any plane. A parasitic current comparable toI_(P1) in the programming case (FIG. 4) is not present during data readbecause both the selected local bit lines and the adjacent non-selectedword lines are both at V_(R). Parasitic currents may flow, however,through low resistance memory elements connected between floating localbit lines and the selected word line. These are comparable to thecurrents I_(P2), I_(P3), and I_(P4) during programming (FIG. 4),indicated as I_(P5), I_(P6) and I_(P7) in FIG. 5. Each of these currentscan be equal in magnitude to the maximum read current through anaddressed memory element. However, these parasitic currents are flowingfrom the word lines at the voltage V_(R) to the selected word line at avoltage V_(R)±Vsense without flowing through the sense amplifiers. Theseparasitic currents will not flow through the selected local bit lines(LBL₁₂, LBL₂₂ and LBL₃₂ in FIG. 5) to which the sense amplifiers areconnected. Although they contribute to power dissipation, theseparasitic currents do not therefore introduce a sensing error.

Although the neighboring word lines should be at V_(R) to minimizeparasitic currents, as in the programming case it may be desirable toweakly drive these word lines or even allow them to float. In onevariation, the selected word line and the neighboring word lines can bepre-charged to V_(R) and then allowed to float. When the sense amplifieris energized, it may charge them to V_(R) so that the potential on theselines is accurately set by the reference voltage from the senseamplifier (as opposed to the reference voltage from the word linedriver). This can occur before the selected word line is changed toV_(R)±Vsense but the sense amplifier current is not measured until thischarging transient is completed.

Reference cells may also be included within the memory array 10 tofacilitate any or all of the common data operations (erase, program, orread). A reference cell is a cell that is structurally as nearlyidentical to a data cell as possible in which the resistance is set to aparticular value. They are useful to cancel or track resistance drift ofdata cells associated with temperature, process non-uniformities,repeated programming, time or other cell properties that may vary duringoperation of the memory. Typically they are set to have a resistanceabove the highest acceptable low resistance value of a memory element inone data state (such as the ON resistance) and below the lowestacceptable high resistance value of a memory element in another datastate (such as the OFF resistance). Reference cells may be “global” to aplane or the entire array, or may be contained within each block orpage.

In one embodiment, multiple reference cells may be contained within eachpage. The number of such cells may be only a few (less than 10), or maybe up to a several percent of the total number of cells within eachpage. In this case, the reference cells are typically reset and writtenin a separate operation independent of the data within the page. Forexample, they may be set one time in the factory, or they may be setonce or multiple times during operation of the memory array. During areset operation described above, all of the global bit lines are setlow, but this can be modified to only set the global bit linesassociated with the memory elements being reset to a low value while theglobal bit lines associated with the reference cells are set to anintermediate value, thus inhibiting them from being reset. Alternately,to reset reference cells within a given block, the global bit linesassociated with the reference cells are set to a low value while theglobal bit lines associated with the data cells are set to anintermediate value. During programming, this process is reversed and theglobal bit lines associated with the reference cells are raised to ahigh value to set the reference cells to a desired ON resistance whilethe memory elements remain in the reset state. Typically the programmingvoltages or times will be changed to program reference cells to a higherON resistance than when programming memory elements.

If, for example, the number of reference cells in each page is chosen tobe 1% of the number of data storage memory elements, then they may bephysically arranged along each word line such that each reference cellis separated from its neighbor by 100 data cells, and the senseamplifier associated with reading the reference cell can share itsreference information with the intervening sense amplifiers readingdata. Reference cells can be used during programming to ensure the datais programmed with sufficient margin. Further information regarding theuse of reference cells within a page can be found in U.S. Pat. Nos.6,222,762, 6,538,922, 6,678,192 and 7,237,074.

In a particular embodiment, reference cells may be used to approximatelycancel parasitic currents in the array. In this case the value of theresistance of the reference cell(s) is set to that of the reset staterather than a value between the reset state and a data state asdescribed earlier. The current in each reference cell can be measured byits associated sense amplifier and this current subtracted fromneighboring data cells. In this case, the reference cell isapproximating the parasitic currents flowing in a region of the memoryarray that tracks and is similar to the parasitic currents flowing inthat region of the array during a data operation. This correction can beapplied in a two-step operation (measure the parasitic current in thereference cells and subsequently subtract its value from that obtainedduring a data operation) or simultaneously with the data operation. Oneway in which simultaneous operation is possible is to use the referencecell to adjust the timing or reference levels of the adjacent data senseamplifiers. An example of this is shown in U.S. Pat. No. 7,324,393.

In conventional two-dimensional arrays of variable resistance memoryelements, a diode is usually included in series with the memory elementbetween the crossing bit and word lines. The primary purpose of thediodes is to reduce the number and magnitudes of parasitic currentsduring resetting (erasing), programming and reading the memory elements.A significant advantage of the three-dimensional array herein is thatresulting parasitic currents are fewer and therefore have a reducednegative effect on operation of the array than in other types of arrays.

Because of the reduced number of parasitic currents in thethree-dimensional array herein, the total magnitude of parasiticcurrents can be managed without the use of such diodes. In addition tothe simpler manufacturing processes, the absence of the diodes allowsbi-polar operation; that is, an operation in which the voltage polarityto switch the memory element from its first state to its second memorystate is opposite of the voltage polarity to switch the memory elementfrom its second to its first memory state. An advantage of the bi-polaroperation over a unipolar operation (same polarity voltage is used toswitch the memory element from its first to second memory state as fromits second to first memory state) is the reduction of power to switchthe memory element and an improvement in the reliability of the memoryelement. These advantages of the bi-polar operation are seen in memoryelements in which formation and destruction of a conductive filament isthe physical mechanism for switching, as in the memory elements madefrom metal oxides and solid electrolyte materials. For these reasons,the embodiments discussed below utilize memory elements that includeresistance switching material and do not include a diode or otherseparate steering device. The use of memory elements that have anon-linear current versus voltage relationship are also envisioned. Forexample as the voltage across an HfOx memory element is reduced from theprogramming voltage to one half the programming voltage the current isreduced by a factor of 5 or even more. In such an embodiment the totalmagnitude of parasitic currents can be managed without the use of diodesin the array.

The level of parasitic currents increases with the number of planes andwith the number of memory elements connected along the individual wordlines within each plane. The increase in parasitic currents increasesonly slightly with additional planes because the selected word line ison only one plane such as WL12 in FIG. 4. Parasitic currents Ip1, Ip2,Ip3, and Ip4 are all on the plane that contains WL12. Leakage currentson other planes are less significant because the floating lines tend tominimize currents on elements not directly connected to the selectedword line. Also since the number of unselected word lines on each planedoes not significantly affect the amount of parasitic current, theplanes may individually include a large number of word lines. Theparasitic currents resulting from a large number of memory elementsconnected along the length of individual word lines can further bemanaged by segmenting the word lines into sections of fewer numbers ofmemory elements. Erasing, programming and reading operations are thenperformed on the memory elements connected along one segment of eachword line instead of the total number of memory elements connected alongthe entire length of the word line.

The re-programmable non-volatile memory array being described herein hasmany advantages. The quantity of digital data that may be stored perunit of semiconductor substrate area is high. It may be manufacturedwith a lower cost per stored bit of data. Only a few masks are necessaryfor the entire stack of planes, rather than requiring a separate set ofmasks for each plane. The number of local bit line connections with thesubstrate is significantly reduced over other multi-plane structuresthat do not use the vertical local bit lines. The architectureeliminates the need for each memory element to have a diode in serieswith the resistive memory element, thereby further simplifying themanufacturing process and enabling the use of metal conductive lines.Also, the voltages necessary to operate the array are much lower thanthose used in current commercial flash memories.

Since at least one-half of each current path is vertical, the voltagedrops present in large cross-point arrays are significantly reduced. Thereduced length of the current path due to the shorter vertical componentmeans that there are approximately one-half the number memory elementson each current path and thus the leakage currents are reduced as is thenumber of unselected memory elements disturbed during a data programmingor read operation. For example, if there are N cells associated with aword line and N cells associated with a bit line of equal length in aconventional array, there are 2N cells associated or “touched” withevery data operation. In the vertical local bit line architecturedescribed herein, there are n cells associated with the bit line (n isthe number of planes and is typically a small number such as 4 to 16),or N+n cells are associated with a data operation. For a large N thismeans that the number of cells affected by a data operation isapproximately one-half as many as in a conventional three-dimensionalarray.

Materials Useful for the Memory Storage Elements

The material used for the non-volatile memory elements M_(zxy) in thearray of FIG. 1 can be a chalcogenide, a metal oxide, CMO, or any one ofa number of materials that exhibit a stable, reversible shift inresistance in response to an external voltage applied to or currentpassed through the material.

Metal oxides are characterized by being insulating when initiallydeposited. One suitable metal oxide is a titanium oxide (TiO_(x)) inwhich near-stoichiometric TiO₂ bulk material is altered in an annealingprocess to create an oxygen deficient layer (or a layer with oxygenvacancies) in proximity of the bottom electrode. The top platinumelectrode for memory storage element comprising TiO_(x), with its highwork function, creates a high potential Pt/TiO₂ barrier for electrons.As a result, at moderate voltages (below one volt), a very low currentwill flow through the structure. The bottom Pt/TiO_(2-x) barrier islowered by the presence of the oxygen vacancies (O⁺ ₂) and behaves as alow resistance contact (ohmic contact). (The oxygen vacancies in TiO₂are known to act as n−type dopant, transforming the insulating oxide inan electrically conductive doped semiconductor.) The resulting compositestructure is in a non-conductive (high resistance) state.

But when a large negative voltage (such as 1.5 volt) is applied acrossthe structure, the oxygen vacancies drift toward the top electrode and,as a result, the potential barrier Pt/TiO₂ is reduced and a relativelyhigh current can flow through the structure. The device is then in itslow resistance (conductive) state. Experiments reported by others haveshown that conduction is occurring in filament-like regions of the TiO₂,perhaps along grain boundaries.

The conductive path is broken by applying a large positive voltageacross the structure. Under this positive bias, the oxygen vacanciesmove away from the proximity of the top Pt/TiO₂ barrier, and “break” thefilament. The device returns to its high resistance state. Both of theconductive and non-conductive states are non-volatile. Sensing theconduction of the memory storage element by applying a voltage around0.5 volts can easily determine the state of the memory element.

While this specific conduction mechanism may not apply to all metaloxides, as a group, they have a similar behavior: transition from a lowconductive state to a high conductive occurs state when appropriatevoltages are applied, and the two states are non-volatile. Examples ofother materials that can be used for the non-volatile memory elementsM_(zxy) in the array of FIG. 1 include HfOx, ZrOx, WOx, NiOx, CoOx,CoAlOx, MnOx, ZnMn₂O₄, ZnOx, TaOx, NbOx, HfSiOx, HfAlOx. Suitable topelectrodes include metals with a high work function (typically >4.5 eV)capable to getter oxygen in contact with the metal oxide to createoxygen vacancies at the contact. Some examples are TaCN, TiCN, Ru, RuO,Pt, Ti rich TiOx, TiAlN, TaAlN, TiSiN, TaSiN, IrO₂ and dopedpolysilicon. Suitable materials for the bottom electrode are anyconducting oxygen rich material such as Ti(O)N, Ta(O)N, TiN and TaN. Thethicknesses of the electrodes are typically 1 nm or greater. Thicknessesof the metal oxide are generally in the range of 2 nm to 20 nm.

One example non-volatile memory element uses Hafnium Oxide (e.g., HfO₂)as a reversible resistance-switching material, and positions thereversible resistance-switching material between two electrodes. A firstelectrode is positioned between reversible resistance-switching materialand a first conductor (e.g. bit line or word line). In one embodiment,the first electrode is made of platinum. The second electrode ispositioned between reversible resistance-switching material a secondconductor (e.g., bit line or word line). In one embodiment, the secondelectrode is made of Titanium Nitride, and serves as a barrier layer. Inanother embodiment, the second electrode is n+ doped polysilicon and thefirst electrode is Titanium Nitride. Other materials can also be used.The technologies described below are not restricted to any one set ofmaterials for forming the non-volatile memory elements.

In another embodiment, the memory storage element will include HafniumOxide (or different metal oxide or different material) as the reversibleresistance-switching material, without any electrodes being positionedbetween the reversible resistance-switching material and the conductors(e.g., bit lines and/or word lines).

Another class of materials suitable for the memory storage elements issolid electrolytes but since they are electrically conductive whendeposited, individual memory elements need to be formed and isolatedfrom one another. Solid electrolytes are somewhat similar to the metaloxides, and the conduction mechanism is assumed to be the formation of ametallic filament between the top and bottom electrode. In thisstructure the filament is formed by dissolving ions from one electrode(the oxidizable electrode) into the body of the cell (the solidelectrolyte). In one example, the solid electrolyte contains silver ionsor copper ions, and the oxidizable electrode is preferably a metalintercalated in a transition metal sulfide or selenide material such asA_(x)(MB2)_(1-x), where A is Ag or Cu, B is S or Se, and M is atransition metal such as Ta, V, or Ti, and x ranges from about 0.1 toabout 0.7. Such a composition minimizes oxidizing unwanted material intothe solid electrolyte. One example of such a composition isAg_(x)(TaS2)_(1-x). Alternate composition materials include α-AgI. Theother electrode (the indifferent or neutral electrode) should be a goodelectrical conductor while remaining insoluble in the solid electrolytematerial. Examples include metals and compounds such as W, Ni, Mo, Pt,metal silicides, and the like.

Examples of solid electrolytes materials are: TaO, GeSe or GeS. Othersystems suitable for use as solid electrolyte cells are: Cu/TaO/W,Ag/GeSe/W, Cu/GeSe/W, Cu/GeS/W, and Ag/GeS/W, where the first materialis the oxidizable electrode, the middle material is the solidelectrolyte, and the third material is the indifferent (neutral)electrode. Typical thicknesses of the solid electrolyte are between 30nm and 100 nm.

In recent years, carbon has been extensively studied as a non-volatilememory material. As a non-volatile memory element, carbon is usuallyused in two forms, conductive (or grapheme like-carbon) and insulating(or amorphous carbon). The difference in the two types of carbonmaterial is the content of the carbon chemical bonds, so called sp² andsp³ hybridizations. In the sp³ configuration, the carbon valenceelectrons are kept in strong covalent bonds and as a result the sp³hybridization is non-conductive. Carbon films in which the sp³configuration dominates, are commonly referred to astetrahedral-amorphous carbon, or diamond like. In the sp² configuration,not all the carbon valence electrons are kept in covalent bonds. Theweak tight electrons (phi bonds) contribute to the electrical conductionmaking the mostly sp² configuration a conductive carbon material. Theoperation of the carbon resistive switching nonvolatile memories isbased on the fact that it is possible to transform the sp³ configurationto the sp² configuration by applying appropriate current (or voltage)pulses to the carbon structure. For example, when a very short (1-5 ns)high amplitude voltage pulse is applied across the material, theconductance is greatly reduced as the material sp² changes into an sp³form (“reset” state). It has been theorized that the high localtemperatures generated by this pulse causes disorder in the material andif the pulse is very short, the carbon “quenches” in an amorphous state(sp³ hybridization). On the other hand, when in the reset state,applying a lower voltage for a longer time (˜300 nsec) causes part ofthe material to change into the sp² form (“set” state). The carbonresistance switching non-volatile memory elements have a capacitor likeconfiguration where the top and bottom electrodes are made of hightemperature melting point metals like W, Pd, Pt and TaN.

There has been significant attention recently to the application ofcarbon nanotubes (CNTs) as a non-volatile memory material. A (singlewalled) carbon nanotube is a hollow cylinder of carbon, typically arolled and self-closing sheet one carbon atom thick, with a typicaldiameter of about 1-2 nm and a length hundreds of times greater. Suchnanotubes can demonstrate very high conductivity, and various proposalshave been made regarding compatibility with integrated circuitfabrication. It has been proposed to encapsulate “short” CNT's within aninert binder matrix to form a fabric of CNT's. These can be deposited ona silicon wafer using a spin-on or spray coating, and as applied theCNT's have a random orientation with respect to each other. When anelectric field is applied across this fabric, the CNT's tend to flex oralign themselves such that the conductivity of the fabric is changed. Asin the other carbon based resistive switching non-volatile memories, theCNT based memories have capacitor-like configurations with top andbottom electrodes made of high melting point metals such as thosementioned above.

Yet another class of materials suitable for the memory storage elementsis phase-change materials. A preferred group of phase-change materialsincludes chalcogenide glasses, often of a compositionGe_(x)Sb_(y)Te_(z), where preferably x=2, y=2 and z=5. GeSb has alsobeen found to be useful. Other materials include AgInSbTe, GeTe, GaSb,BaSbTe, InSbTe and various other combinations of these basic elements.Thicknesses are generally in the range of 1 nm to 500 nm. The generallyaccepted explanation for the switching mechanism is that when a highenergy pulse is applied for a very short time to cause a region of thematerial to melt, the material “quenches” in an amorphous state, whichis a low conductive state. When a lower energy pulse is applied for alonger time such that the temperature remains above the crystallizationtemperature but below the melting temperature, the material crystallizesto form poly-crystal phases of high conductivity. These devices areoften fabricated using sub-lithographic pillars, integrated with heaterelectrodes. Often the localized region undergoing the phase change maybe designed to correspond to a transition over a step edge, or a regionwhere the material crosses over a slot etched in a low thermalconductivity material. The contacting electrodes may be any high meltingmetal such as TiN, W, WN and TaN in thicknesses from 1 nm to 500 nm.

It will be noted that the memory materials in most of the foregoingexamples utilize electrodes on either side thereof whose compositionsare specifically selected. In embodiments of the three-dimensionalmemory array herein where the word lines (WL) and/or local bit lines(LBL) also form these electrodes by direct contact with the memorymaterial, those lines are preferably made of the conductive materialsdescribed above. In embodiments using additional conductive segments forat least one of the two memory element electrodes, those segments aretherefore made of the materials described above for the memory elementelectrodes.

Steering elements are commonly incorporated into controllable resistancetypes of memory storage elements. Steering elements can be a transistoror a diode. Although an advantage of the three-dimensional architecturedescribed herein is that such steering elements are not necessary, theremay be specific configurations where it is desirable to include steeringelements. The diode can be a p-n junction (not necessarily of silicon),a metal/insulator/insulator/metal (MIIM), or a Schottky typemetal/semiconductor contact but can alternately be a solid electrolyteelement. A characteristic of this type of diode is that for correctoperation in a memory array, it is necessary to be switched “on” and“off” during each address operation. Until the memory element isaddressed, the diode is in the high resistance state (“off” state) and“shields” the resistive memory element from disturb voltages. To accessa resistive memory element, three different operations are needed: a)convert the diode from high resistance to low resistance, b) program,read, or reset (erase) the memory element by application of appropriatevoltages across or currents through the diode, and c) reset (erase) thediode. In some embodiments one or more of these operations can becombined into the same step. Resetting the diode may be accomplished byapplying a reverse voltage to the memory element including a diode,which causes the diode filament to collapse and the diode to return tothe high resistance state.

For simplicity the above description has considered the simplest case ofstoring one data value within each cell: each cell is either reset orset and holds one bit of data. However, the techniques of the presentapplication are not limited to this simple case. By using various valuesof ON resistance and designing the sense amplifiers to be able todiscriminate between several of such values, each memory element canhold multiple-bits of data in a multiple-level cell (MLC). Theprinciples of such operation are described in U.S. Pat. No. 5,172,338referenced earlier. Examples of MLC technology applied to threedimensional arrays of memory elements include an article entitled“Multi-bit Memory Using Programmable Metallization Cell Technology” byKozicki et al., Proceedings of the International Conference onElectronic Devices and Memory, Grenoble, France, Jun. 12-17, 2005, pp.48-53 and “Time Discrete Voltage Sensing and Iterative ProgrammingControl for a 4F2 Multilevel CBRAM” by Schrogmeier et al. (2007Symposium on VLSI Circuits).

Structural Example of the Three-Dimensional Array

One example semiconductor structure for implementing thethree-dimensional memory element array of FIG. 1 is illustrated in FIG.6, which is configured for use of non-volatile memory element (NVM)material that is non-conductive when first deposited. A metal oxide ofthe type discussed above has this characteristic. Since the material isinitially non-conductive, there is no necessity to isolate the memoryelements at the cross-points of the word and bit lines from each other.Several memory elements may be implemented by a single continuous layerof material, which in the case of FIG. 6 are strips of NVM materialoriented vertically along opposite sides of the vertical bit lines inthe y-direction and extending upwards through all the planes. Asignificant advantage of the structure of FIG. 6 is that all word linesand strips of insulation under them in a group of planes may be definedsimultaneously by use of a single mask, thus greatly simplifying themanufacturing process.

Referring to FIG. 6, a small part of four planes 101, 103, 105 and 107of the three-dimensional array are shown. Elements of the FIG. 6 arraythat correspond to those of the equivalent circuit of FIG. 1 areidentified by the same reference numbers. It will be noted that FIG. 6shows the two planes 1 and 2 of FIG. 1 plus two additional planes on topof them. All of the planes have the same horizontal pattern ofconductor, dielectric and NVM material. In each plane, metal word lines(WL) are elongated in the x-direction and spaced apart in they-direction. Each plane includes a layer of insulating dielectric thatisolates its word lines from the word lines of the plane below it or, inthe case of plane 101, of the substrate circuit components below it.Extending through each plane is a collection of metal local bit line(LBL) “pillars” elongated in the vertical z-direction and forming aregular array in the x-y direction.

Each bit line pillar is connected to one of a set of global bit lines(GBL) running in the y-direction at the same pitch as the pillar spacingthrough the vertical TFT select devices (Q_(xy)) whose gates are drivenby the row select lines (SG) elongated in the x-direction. The verticalTFT select devices have a channel extension, in one embodiment. The bodyof the TFT select devices are formed from a wide band gap semiconductor,in one embodiment. The wide band gap semiconductor for the body may bean oxide semiconductor, a metal oxide semiconductor, etc.

Not shown in FIG. 6 are sense amplifiers, input-output (I/O) circuitry,control circuitry, and any other necessary peripheral circuitry. Thereis one row select line (SG) for each row of local bit line pillars inthe x-direction and one vertical TFT select device (Q) for eachindividual vertical local bit line (LBL).

Each vertical strip of NVM material is sandwiched between the verticallocal bit lines (LBL) and a plurality of word lines (WL) verticallystacked in all the planes. Preferably the NVM material is presentbetween the local bit lines (LBL) in the x-direction. A memory storageelement (M) is located at each intersection of a word line (WL) and alocal bit line (LBL). In the case of a metal oxide described above forthe memory storage element material, a small region of the NVM materialbetween an intersecting local bit line (LBL) and word line (WL) iscontrollably alternated between conductive (set) and non-conductive(reset) states by appropriate voltages applied to the intersectinglines.

In one embodiment, the NVM material includes Hafnium Oxide, the wordlines comprise TiN, and the bit lines comprise N+ silicon.

There may also be a parasitic NVM element formed between the LBL and thedielectric between planes. By choosing the thickness of the dielectricstrips to be large compared to the thickness of the NVM material layer(that is, the spacing between the local bit lines and the word lines), afield caused by differing voltages between word lines in the samevertical word line stack can be made small enough so that the parasiticelement never conducts a significant amount of current. Similarly, inother embodiments, the non-conducting NVM material may be left in placebetween adjacent local bit lines if the operating voltages between theadjacent LBLs remain below the programming threshold.

Vertical TFT Decoder Having Wide Energy Band Gap Semiconductor Body

To enable the memory to be denser (e.g., more memory elements per area),the size of the memory elements can be made small and the memoryelements can be arranged close to each. To enable the memory elements tobe close to each other, one embodiment uses a vertically oriented TFTdecoder for connecting the individual local vertical bit line pillars tothe respective global bit lines. In one embodiment, each verticallyoriented TFT select device is a pillar select device that is formed as avertical structure, switching between a local bit line pillar and aglobal bit line. The vertical TFT select devices, are in someembodiments formed in a separate layer (pillar select layer) above theCMOS layer/substrate, along the z-direction between the array of globalbit lines and the array of local bit lines. The CMOS layer is thesubstrate where the support circuitry is implemented, including the rowselect circuit and word line drivers. The use of vertically oriented TFTselect devices above, but not in, the substrate allows the memoryelements to be arranged in a more compact fashion, thereby increasingdensity. Additionally, positioning the vertically oriented TFT selectdevices above the substrate allows for other devices (e.g., the wordline drivers) to be positioned in the substrate under the memory arrayrather than outside of the array, which allows the integrated circuit tobe smaller.

For example, a pillar shaped vertical Thin Film Transistor (TFT) can becan be used as the select device. In one example implementation, acontrol node of the select transistor has a collar shaped hole, and thegate and channel region are formed in the hole with the source/drainregions formed above/below the channel region. Another alternative is todefine the gates as a rail etch and have the channel deposited in atrench between the gates and singulated by an etch with crossing linesmask (rather than holes).

FIG. 7 illustrates schematically the three dimensional memory (“3Dmemory”) comprising of a memory layer on top of a pillar select layer.The 3D memory 10 is formed on top of a CMOS substrate (not shownexplicitly) where structures in the CMOS are referred to as being in theFEOL (“Front End of Lines”). The vertically oriented TFT select devicesswitching individual vertical bit lines (that are above and not in thesubstrate) to individual global bit lines are now formed on top of theFEOL layer in the BEOL (“Back End of Lines”). Thus, the BEOL comprisesof the pillar select layer with the memory layer on top of it. Thevertically oriented TFT select devices (such as Q₁₁, Q₁₂, . . . , Q₂₁,Q₂₂, . . . , etc.) are formed in the pillar select layer as verticallyoriented TFT select devices. The pillar select layer is formed above(and not in) the substrate. The memory layer comprises multiple layersof word lines and memory elements. For simplicity, FIG. 7 shows only onelayer of word lines, such as WL₁₀, W₁₁, . . . , etc., without showingthe memory elements that exist between each crossing of a word line anda bit line.

In the example of FIG. 7, the vertically oriented TFT select deviceshave one gate that is connected to one of the select lines. In someembodiments, each vertically oriented TFT select device has two gates.

FIG. 8A illustrates a schematic circuit diagram of a given verticallyoriented TFT select device switching a local bit line to a global bitline. In the example, the local bit line LBL 530 is switchable to theglobal bit line GBL 526 by a vertically oriented TFT select transistor504 such as Q₁₁. The gate of the TFT select transistor Q₁₁ iscontrollable by a signal exerted on a row select line SG₁.

FIG. 8B illustrates the structure of the vertically oriented TFT selectdevice in relation to the local bit line and the global bit line. Theglobal bit line such as GBL 526 is formed below the vertically orientedTFT select device, in the FEOL as part of the metal layer-1 or metallayer-2 502. The vertically oriented TFT select device is formed in theBEOL layer on top of the GBL 526 (and above, but not in, the substrate).The local bit line LBL 530, in the form of a pillar, is formed on top ofthe vertically oriented select device 504. In this way, the verticallyoriented TFT select device 504 can switch the local bit line pillar LBLto the global bit line GBL.

FIG. 9 shows a portion of the memory system, with the memory elementsbeing depicted as resistors (due to their reversible resistanceswitching properties). FIG. 9 shows the Pillar Select Layer below theMemory Layer and above (and not in) the Substrate. Only a portion of theMemory Layer is illustrated. For example, FIG. 9 shows bit lines LBL1,LBL2, . . . LBL72. In this embodiment each of the word lines areconnected to 72 memory elements. Each of the memory elements isconnected between a word line and a bit line. Therefore, there will be72 memory elements connected to the same word line and different bitlines (of the 72 bit lines in a row). Each of the bit lines areconnected to a respective global bit line by one of the verticallyoriented TFT select devices 504 of the Pillar Select Layer. The signalSG_(x) driving the set of vertically oriented TFT select devices 504depicted in FIG. 9 is controlled by the Row Select Line Driver. Notethat the Row Select Line Driver is implemented in the substrate. Theglobal bit lines (GBL1, GBL2, . . . GBL72) are implemented in the metallines above the substrate. FIG. 9 shows one slice taken along the wordline direction such that each of the bit lines depicted in FIG. 9 areconnected to different global bit lines via the vertically oriented TFTselect devices 504.

In one embodiment, pairs of neighboring word lines (e.g., WLa and WLb,WLp and WLq, WLr and WLs) will be connected to memory elements that arein turn connected to common bit lines. FIG. 9 shows three pairs of wordlines (WLa and WLb, WLp and WLq, WLr and WLs), with each of the pairbeing on a different layer of the memory structure. In one illustrativeembodiment, the word lines receive address dependent signals such a thatword line WLb is selected for memory operation while word lines WLa,WLp, WLq, WLr and WLs are not selected. Although the enabling signalapplied on row select line SGx causes all of the vertically oriented TFTselect devices 504 to connect the respective global bit lines to therespective local bit lines of FIG. 9, only the global bit line GLBL1includes a data value for programming (as noted by the S). Global bitlines GLBL2 and GLBL72 do not include data for programming (as noted bythe U). This can be due to the data pattern being stored as the globalbit lines receive data dependent signals. Note that while SGx receive anenable signal, other select lines receive a disable signal to turn offthe connected select devices.

Because local bit line LBL 1 and word line WLb are both selected forprogramming, the memory element between local bit line LBL1 and wordline WLb is selected for the memory operation (as noted by the S). Sincelocal bit line LBL1 is the only bit line with program data, the othermemory elements connected to WLb will be half selected (as noted by H).By half selected, it is meant that one of the control lines (either thebit line or the word line) is selected but the other control line is notselected. A half selected memory element will not undergo the memoryoperation. The word line WLa is not selected; therefore, the memory cellbetween WLa and local bit line LBL1 is half selected, and the othermemory elements on WLa are unselected. Since word lines WLp, WLq, WLrand WLs are not selected, their memory elements connected to LBL1 arehalf selected and the other memory elements connected to those wordlines are unselected.

FIG. 10 is a schematic diagram to illustrate some of the concernspertaining to a selection device. This example will discuss concernswhen FORMING memory elements. Two vertical TFT selection devices 504 areshown connected between a global bit line and the vertically orientedlocal bit lines. The vertical TFT selection device 504 on the left has aselect voltage (V_(SG) _(_) _(SEL)) applied to its gate (e.g., to turnit on). The vertical TFT selection device 504 on the right has anunselect voltage (V_(SG) _(_) _(UnSEL)) applied to its gate (e.g., tokeep it off).

As will be discussed more fully below, the vertical TFT selection device504 has a top junction and a bottom junction, in some embodiments. Thetop junction is between the body and the top source/drain. The bottomjunction is between the body and the bottom source/drain. The followingdiscussion will serve to explain how one junction may need to be able towithstand a greater voltage than the other junction.

A voltage V_(GBL) is applied to the global bit line. Three word lines(WL) are represented. A select voltage (V_(WL) _(_) _(SEL)) is appliedto the selected word line in the middle. An unselect voltage (V_(WL)_(_) _(UnSEL)) is applied to the other two word lines.

There are four memory elements 540 a-540 d, each represented by aresistor. Each memory element 540 is connected between a local bit line(LBL) and a word line (WL). The table in FIG. 10 indicates that theremay be a selected cell and three different types of unselected memorycells (F, H, U). The three different types of unselected memory cellsrefers to the different voltages that are applied between their bitlines and their word line.

Memory element 540 a is between the selected bit line and an unselectedword line. The current I_(FCELL) _(_) _(Leak) is shown to represent aleakage current. This is an “F” cell.

Memory element 540 b is between the selected bit line and the selectedword line. Thus, this is the memory element 540 b undergoing FORMING.The current I_(CELL) _(_) _(SEL) is shown to represent the currentthough the select memory cell. Note that the resistance of the selectedmemory typically drops sharply during FORMING. For example, it coulddrop from 1 G Ohm to 4 M Ohm, for some types of memory elements.

Memory element 540 c is between the unselected bit line and the selectedword line. This is an “H” cell. Memory element 540 d is between theunselected bit line and the other unselected word line. This is a “U”cell.

In one embodiment, the FORMING operation is what is referred to hereinas a forward FORMING. Example voltages for this FORMING operation are:V_(GBL)—about 3V to 6V; V_(SG) _(_) _(SEL)=about 3.5V to 5.5V; V_(SG)_(_) _(UnSEL)=about 0V or V_(SG) _(_) _(SEL)—4V; V_(WL) _(_)_(SEL)=about 0V; V_(WL) _(_) _(UnSEL)=about 2V. Note that V_(WL) _(_)_(UnSEL) may be equal to about the voltage of the unselected bit line.Note that the global bit line is a high voltage and the selected wordline is a low voltage. By convention, this is referred to as a forwardFORMING.

When applying forward FORMING voltages, the bottom junction of the TFTcould need to withstand a greater voltage than the top junction. In oneembodiment, the TFT has a channel extension on the bottom so that it isable to withstand forward FORMING voltages such as, but not limited to,this example.

In one embodiment, the FORMING operation is what is referred to hereinas a reverse FORMING. Example voltages for this reverse FORMINGoperation are: V_(GBL)—about 0V; V_(SG) _(_) _(SEL)=about 0.5V to 2.5V;V_(SG) _(_) _(UnSEL)=about 0V; V_(WL) _(_) _(SEL)=about 4V to 5V; V_(WL)_(_) _(UnSEL)=about 2.3V. Note that V_(WL) _(_) _(UnSEL) may be equal toabout the voltage of the unselected bit line. Note that the global bitline is a low voltage and the selected word line is a high voltage. Byconvention, this is referred to as a reverse FORMING.

When applying reverse FORMING voltages, the top junction of the TFTcould need to withstand a greater voltage than the bottom junction. Inone embodiment, the TFT has a channel extension on the top so that it isable to withstand reverse FORMING voltages such as, but not limited to,this example.

Whether a forward FORMING operation or reverse FORMING operation isperformed may depend on the type of material in the memory element 540.Thus, after it is determined what type of memory element is being used,and hence whether FORMING will be forward or reverse, characteristics ofthe TFT may be determined.

As noted, the requirements on the vertical TFT selection device 504 maybe different for the two cases. For the forward FORMING operation, thebottom junction may be put under greater stress. Thus, the bottomjunction may be referred to as a high voltage (HV) junction in that itneeds to have a higher breakdown voltage than the top junction, in someembodiments.

As noted, for the reverse FORMING operation, the top junction may be putunder greater stress. Thus, the top junction may be referred to as ahigh voltage (HV) junction in that it needs to have a higher breakdownvoltage than the bottom junction, in some embodiments. In oneembodiment, a channel extension is used at the top of the vertical TFTselection device 504 to provide for a HV junction at the top.

FIGS. 11A-11G depict various embodiments of a vertical TFT selectiondevice having a body formed from a wide energy band gap semiconductor.The vertical TFT selection devices 504 may be used for selectingvertically oriented bit lines. The device of FIG. 11A will be discussedfirst. The vertical TFT selection device 504 has a body 501 that isformed a wide energy band gap semiconductor. The wide energy band gapsemiconductor is an oxide semiconductor, in one embodiment. The oxidesemiconductor is a metal oxide semiconductor, in one embodiment. As oneexample, the body 501 could be InGaZnO. Other examples for the body 501include, but are not limited to, InZnO, HfInZnO, ZrInZnO, and ZnInSnO.Thus, the wide band gap semiconductor for the body 501 may be an oxidesemiconductor, a metal oxide semiconductor, etc.

The vertical TFT selection device 540 has two source/drain (S/D) regions503 a, 503 b at either end of the body 501. The source/drain regions 503may also be formed from the wide energy band gap semiconductor. Thus,the source/drain regions 503 could be formed from an oxidesemiconductor, a metal oxide semiconductor, etc. Thus, the source/drainregions 503 could be InZnO, HfInZnO, ZrInZnO, ZnInSnO, etc.

However, the source/drain (S/D) regions 503 a, 503 b could be formed inwhole or in part from metal that is adjacent to the wide band gapsemiconductor body 501. In one embodiment, the source/drain (S/D)regions 503 a, 503 b are formed entirely from metal that is adjacent tothe wide band gap semiconductor that forms the body 501. In oneembodiment, the source/drain (S/D) regions 503 a, 503 b are formedentirely from wide band gap semiconductor. In one embodiment, thesource/drain (S/D) regions 503 a, 503 b are formed in part from themetal that is adjacent to the wide band gap semiconductor and in partfrom the wide band gap semiconductor.

In this embodiment, the vertical TFT selection device 504 is a dual gatedevice, having a gate 507 on each side of the body 501. A gatedielectric 505 extends along the sides of the source/drain regions 503and the body 501. Thus, the gate dielectric 505 resides between the body501 and the gates 507. However, the vertical TFT selection device 504could have a single gate 507. An example material for the gatedielectric 505 is SiO₂. A portion of the gate dielectric 505 may alsoseparates the gates 507 from the body or the source/drain 503. In thisembodiment, the device 504 is symmetrical, with respect to the gate 507location relative to the S/D 503 a, 503 b. In some embodiments, thedevice 504 has a channel extension, otherwise referred to as agate/source or gate/drain offset.

The vertical TFT selection device 504 has a top contact 508 a and abottom contact 508 b. The bottom contact 508 b provides electricalconnection to the global bit line 526. The top contact 508 a provideselectrical connection to the local vertical bit line (not depicted inFIG. 11A). The contacts 508 are formed from TiN in one embodiment. Thecontacts 508 are formed from TiSi, in one embodiment. Other materialscan be used for the contacts 508. A region of oxide 520 is depictedalong the sides of the device 504 between the gates 507 and the globalbit line 526.

In some embodiments, the body and the source/drain (S/D) are of the sametype of conductivity. For example, the body 501 may be n−type and eachS/D 503 may be N+. In one embodiment, the transistor will be NFET ofdepletion type, e.g., at Vg=0 the transistor will be conducting, and anegative gate bias will be needed to shut it off. However, the N+/n/N+structure can be also be of enhancement type, e.g., at zero gate biasthe transistor will be shut off, and at a positive Vg>Vth it will beturned on. For an enhancement type, the work function of the gatematerial should be high enough to keep the transistor in the off-statewhen zero gate bias is applied (e.g., Vg=0). An example of such anN+/n/N+ transistor is IGZO (InGaZnO) transistor with gate electrode madeof Cu. Other combinations are possible.

In some embodiments, the body 501 and the source/drain (S/D) 503 are ofthe same type of conductivity, but of p−type. For example, the body 501may be p−type and each S/D 503 may be P+. In this case, the transistorwill be a PFET. Also, the transistor may be of depletion type. Forexample, it will be conducting at Vg=0. To shut it off, a positive gatebias will be applied, in one embodiment.

However, the body 501 and the source/drain (S/D) 503 are not required tobe the same type of conductivity. In other embodiments, the body of thetransistor can be p− type and source and drain N+ type. In oneembodiment, the N+/p/N+ transistor is an NFET of enhancement type.

In another embodiment, the TFT body 501 can be n−type and source anddrain P+. In this case, the transistor will be a PFET of enhancementtype. At Vg=0, it will be shut off. To turn the transistor on, anegative bias with absolute value more than the absolute value ofnegative Vth may be applied.

Also note that the body 501 is not required to be intentionally doped.For example, the body 501 could be intrinsic. This applies fortransistors having N+ source/drains (S/D) 503 and for P+ source/drains(S/D) 503.

In one embodiment, the wide band gap semiconductor is not intentionallydoped, and can be n−type, p−type or intrinsic. In this case, thetransistor source and drain (S/D) are not intentionally doped.

In yet another embodiment, the wide band gap semiconductor isintentionally and uniformly doped, and can be of n− or p−type. Theuniform doping in this case may or may not be needed, depending onintrinsic level of doping, and transistor Vth requirements, and also onthe requirements of channel-to-S/D series resistance.

In the cases of uniform doping described above, the portions of the wideband gap semiconductor adjacent to the metal electrodes may form sourceand drain regions 503.

In one embodiment, the body of the transistor can be made of a wide bandgap semiconductor with source and drain made in part or in full of metal(or metal stack) that is put in direct contact with the wide band gapsemiconductor body. FIG. 11B5 shows one embodiment having metal S/Delectrodes 503 a, 503 b, which are in direct contact with the wide bandgap semiconductor body 501. The S/D electrodes 503 a, 503 b in this casemay serve as both the top/bottom contacts 508 a, 508 b and as at least apart of the S/D regions 503 a, 503 b.

Thus, the S/D metal electrodes 503 a, 503 b, which are in direct contactwith the wide band gap semiconductor body, can form at least a part ofthe S/D regions of the TFT transistor. The source and drain regions 503of such a transistor can be formed in part or in full by the metalregion of the S/D electrodes 503. The wide band gap semiconductor mayform part of the S/D regions in this case. In one embodiment, thetransistor structure may be considered to be a Metal-wide band gapsemiconductor-Metal transistor. One embodiment of the example of FIG.11B5 is such a device. The gate may also be made of metal. In oneexample, such a device can be made with wide band gap semiconductor bodymade of InGaZnO, which may be deposited for instance by PVD at 300 C. Inone embodiment, the source and drain (S/D) contacts 503 can be made ofAl with a Ti barrier. Other source and drain (S/D) contact 503 materialoptions include TiN. Other metal materials can be used for S/D contacts503 depending on the choice of the wide band gap semiconductor.

However, still other possibilities exist. The possibilities depend on aspecific material used for TFT, on process, e.g., how it is deposited,etc. The above may determine the type of conductivity the TFT body mayhave. The type conductivity and level of doping may also be modulatedfor a chosen wide band gap semiconductor, by choosing the appropriateprocess.

FIG. 11B1 depicts one embodiment of vertical TFT selection device 504having a body 501 formed from a wide energy band gap semiconductor inwhich the body 501 is n−type and the S/D 503 are N+. In this embodiment,the S/D regions 503 a, 503 b are heavily doped. The body 501 may insteadbe intrinsic or undoped. In the embodiment of FIG. 11A, the S/D regions503 a, 503 b are not doped. The body 501 may or may not be doped.

FIG. 11B2 depicts one embodiment of vertical TFT selection device 504having a body 501 formed from a wide energy band gap semiconductor inwhich the body 501 is p−type and the S/D 503 are P+. In this embodiment,the S/D regions 503 a, 503 b are heavily doped. The body 501 may insteadbe intrinsic or undoped.

FIG. 11B3 depicts one embodiment of vertical TFT selection device 504having a body 501 formed from a wide energy band gap semiconductor inwhich the body 501 is p−type and the S/D 503 are N+. In this embodiment,the S/D regions 503 a, 503 b are heavily doped. The body 501 may insteadbe intrinsic or undoped.

FIG. 11B4 depicts one embodiment of vertical TFT selection device 504having a body 501 formed from a wide energy band gap semiconductor inwhich the body 501 is n−type and the S/D 503 are P+. In this embodiment,the S/D regions 503 a, 503 b are heavily doped. The body 501 may insteadbe intrinsic or undoped.

In one embodiment, the vertical TFT selection device 504 has a channelextension. FIGS. 11C and 11D depict embodiments having a channelextension. In both embodiments, the body 501 (as well as S/D 503) isformed from a wide energy band gap semiconductor. The wide energy bandgap semiconductor may be formed from similar materials as the device 504of FIG. 11A. However, one alternative is for at least a portion of theS/D 503 to be formed from metal adjacent to the wide energy band gapsemiconductor.

Referring now to FIG. 11C, the channel extension is at the upperportion. The device 504 has an upper junction that is between the body501 and the upper S/D 503 a. The device 504 has a lower junction that isbetween the body 501 and the lower S/D 503 b. In this example, the S/D503 a, 503 b may be heavily doped. The device of FIG. 11C provides for aHV junction at the top junction. The device 504 is used in a 3D memoryarray in which the memory elements are FORMED using a reverse formingvoltage, in one embodiment.

The body 501 extends past the gates 507 (above the gates), in thisembodiment. The body 501 is not extended on the bottom of the TFT 504.That is, the body 501 does not extend past the gates 507 (lower than thegates) at the lower junction. Another way of looking at this is that thegates 507 are offset from the upper isotype junction, in thisembodiment. By the gate 507 being offset from the isotype junction, itis meant that that the gate 507 is not directly adjacent to the isotypejunction. For example, the gates 507 are not directly adjacent to theupper isotype junction. The gates 507 are not offset from the lowerisotype junctions in this embodiment. That is, the gates 507 aredirectly adjacent to the lower isotype junction. Another way of statingthe foregoing is that the top portion of the gates 507 does not extendabove the upper isotype junction. However, the bottom portion of thegates 507 does extend below the lower isotype junction. In the case thetop or/and bottom portion of the gates 507 extend beyond the isotypejunction, the structure has respective gate-junction overlap, orgate-source or/and gate/drain overlap.

FIG. 11D shows one embodiment having the channel extension is at thelower portion of the device 504. The device 504 is similar to the onedepicted in FIG. 11C, but has the channel extension at the bottominstead. This device is used in a 3D memory array in which the memoryelements are FORMED using a forward forming voltage, in one embodiment.

The vertical TFT selection device 504 has a channel extension, which inthis example is at the lower portion of the TFT 504. The body 501extends past (lower than in this case) the gates 507, in thisembodiment. The body 501 is not extended on the top of the TFT 504. Thatis, the body 501 does not extend past (above in this case) the gates 507at the upper junction.

Another way of looking at this is that the gates 507 are offset from thelower junction in this embodiment. In this case, the gates 507 are notdirectly adjacent to the lower junction. Instead, there is oxide 520directly adjacent to the lower junction, in this embodiment. On theother hand, the gates 507 are directly adjacent to the upper junction.Thus, the upper portion of the gates 507 are not offset from the upperjunction. Another way of stating the foregoing is that the lower portionof the gates 507 does not extend below the lower junction. However, thetop portion of the gates 507 does extend above the upper junction.

The lower source/drain 503 b is connected to a global bit line in thisembodiment. The upper source drain 503 a could be connected to avertically oriented bit line (not depicted in FIG. 11D).

The channel extension helps provide for good high voltage operation. Thevertical TFT select devices 504 are able to withstand high voltagedifferences between their source/drain regions 503. For some operations,a relatively high voltage difference results between the twosource/drains 503 a, 503 b. It is important that the vertically orientedTFT select device 504 does not breakdown. The channel extension resultsin higher breakdown voltage, which can prevent breakdown during requiredhigh voltage operation. The channel extension can also result in muchlower leakage during high voltage operation, which is important for theproper cell and array operation.

It is also important that the TFT does not exhibit high leakage current.The channel extension also helps provide for a low leakage current. Notethat GIDL could possibly be a problem when operating the verticallyoriented TFT select device 504. However, the channel extension helpsnoticeably reduce or minimize GIDL.

As noted, one alternative to the examples of FIGS. 11C and 11D is for atleast a portion of the S/D 503 to be formed from metal adjacent to thewide energy band gap semiconductor. Thus, instead of a top S/D region503 a and top contact 508 a, there may be a top S/D region 503 a formedfrom metal. Instead of a bottom S/D region 503 b and bottom contact 508b, there may be a bottom S/D region 503 b formed from metal. In oneembodiment, the S/D metal may be formed as a stack of several metalfilms made of different materials and deposited in sequence.

In this case, the channel length L can be defined as the length of thewide band gap semiconductor body 501. In other words, this is thedistance between the metal S/D regions 503 a, 503 b. For the case of thetransistor gate overlapping both the source and drain, the length of thegate is longer than the L. Such an example is depicted in FIG. 11B5.

In the case of channel extension similar to FIG. 11C, the channelextension will be the distance from the upper gate edge to the edge ofmetal S/D occupying the region 503 a.

In the case of channel extension similar to FIG. 11D, the channelextension will be the distance from the lower gate edge to metal S/Doccupying the region 503 b.

From process prospective, forming such a transistor may start fromdepositing the bottom S/D metal (and electrode) that would occupy theregion 503 b, then depositing the wide band gap semiconductor, and thendepositing the top S/D metal (and electrode) occupying the region 503 a.

FIG. 11E shows one embodiment of a vertical TFT selection device 504having a single gate. The device is similar to the one of FIG. 11C inthat it has a channel extension on the upper portion of the TFTselection device 504. FIG. 11F shows one embodiment of a vertical TFTselection device 504 having a single gate. The device 504 is similar tothe one of FIG. 11D in that it has a channel extension on the lowerportion of the TFT selection device 504. Other gate configurations arepossible.

In the embodiments of FIGS. 11E and 11F, the body (as well as source anddrain) of the TFT is formed from a wide energy band gap semiconductor.The wide energy band gap semiconductor is an oxide semiconductor, in oneembodiment. The wide energy band gap semiconductor is a metal oxidesemiconductor, in one embodiment. As one example, the body 501 could beInGaZnO. Other examples include, but are not limited to, InZnO, HfInZnO,ZrInZnO, and ZnInSnO.

FIG. 11G shows a perspective view of one embodiment of a vertical TFTselection device 504 having a single gate and a body 501 formed from awide band gap semiconductor. The TFT 504 could have a second gate (andgate dielectric) on the opposite side of the body 501. The lowersource/drain is connected to lower contact 508 b, which is connected toa global bit line. The upper source/drain is connected to an uppercontact 508 a, which is connected to a vertical local bit line. Achannel extension is not depicted in FIG. 11G. However, the device 504could have a channel extension, as discussed herein.

The lower source/drain 503 b and the upper source drain 503 a are formedfrom the wide band gap semiconductor in one embodiment. The lowersource/drain 503 b and the upper source drain 503 a are formed frommetal in one embodiment. The lower source/drain 503 b and the uppersource drain 503 a are formed in part from metal and in part from thewide band gap semiconductor, in one embodiment.

Example dimensions of the vertical TFT selection device 504 are asfollows. The height may be about 120-180 nm. The TFT height can also besmaller or bigger depending on requirements for cell and arrayoperation. Here, the height of the device includes source, drain andchannel regions. With the fixed source and drain junction depths, thebigger the overall height, the bigger the channel length.

The body, as well as source/drains, has a thickness “D”. In one example,the body thickness is close to the vertical local BL half pitch. Anexample range of the thickness is 24-48 nm, but this could be smaller orlarger. The body, as well as source/drains, have a width (dimension inthe direction of WLs, in one example, may be close to the WL half pitch)that may be about 24-48 nm, but this could be smaller or larger. Thegate dielectric may be about 5 nm. However, the gate dielectric may bethicker or thinner.

If a channel extension is used, the channel extension may be betweenabout 10 nm to 30 nm, as one example range. Here, the channel extensionrefers to the distance between the end of the gate and the S/D junctionposition (or the start of the source/drain).

The global bit line 526 might be metal, highly doped polysilicon, etc.The global bit line 526 could be a combination of materials. Forexample, the lower portion could be metal, whereas the upper portion(nearest the TFT 504) could be highly doped polysilicon. As one example,the global bit line can be tungsten (at least in part). In theembodiment depicted in FIG. 11G, there is a lower contact 508 b betweenthe lower source/drain 503 b and the global bit line 526. The lowercontact 508 b may be TiN, SiN, or another material. Depending on thematerial selection for the global bit line 526, the lower contact 508 bmay not be needed.

Note that the vertical bit line material may serve as one of theelectrodes of read-write memory elements. In one embodiment, thematerial of the vertical BL 530 is N+ polysilicon. For some types ofmemory cells, N+ polysilicon serves as a better electrode choice (on theBL side) to achieve desired operation of a specific memory cell andmemory array.

However, for other memory cells with different material composition, P+polysilicon may be a better choice as an electrode (on BL side) toensure desired operation of the memory cell and array. This may be dueto the fact that P+ polysilicon work function is different from N+polysilicon, and may be more suitable for the electrode material toenable the most efficient memory cell operation. Thus, the vertical bitline material is P+ polysilicon, in one embodiment. In one embodiment,the vertical bit line is formed from a metal.

In the example depicted in FIG. 11G, the TFT select device 504 has anupper contact 508 a. The upper contact 508 a may be formed from TiN,SiN, etc. Note that the upper contact 508 a may not be required for atleast some vertical bit line 530 materials. Thus, in some embodiments,the upper contact 508 a is not used.

FIG. 12A is a cross-sectional view of a memory structure using oneembodiment of a vertically oriented TFT select device 504 and the memorystructure of FIG. 6. The vertical TFT selection device 504 has a body501 that is formed a wide energy band gap semiconductor. Likewise, thesource and drain are formed from the wide energy band gap semiconductor.The wide energy band gap semiconductor is an oxide semiconductor, in oneembodiment. The oxide semiconductor is a metal oxide semiconductor, inone embodiment. As one example, the body 501 could be InGaZnO. Otherexamples for the body 501 include, but are not limited to, InZnO,HfInZnO, ZrInZnO, and ZnInSnO. Thus, the wide band gap semiconductor forthe body 501 may be an oxide semiconductor, a metal oxide semiconductor,etc.

For convenience of explanation, the TFT select device 504 is depicted asan N+/n/N+ device in FIGS. 12A-12C. However, the TFT select device 504could have other configurations, such as P+/p/P+, P+/n/P+, N+/p/N+, etc.Depending on process and the specific body material, the level of dopingcan be different. An example range of body doping can be 1×10¹⁷ to1×10¹⁸ cm⁻³. However, it can be lower or higher. The body can be undopedor intrinsic. Undoped in this context means not intentionally doped.Note that an undoped or intrinsic body may have a low level ofimpurities. Depending on TFT threshold voltage (Vth) requirements,intentionally doping the body may or may not be required.

Also note that the TFT select device 504 could be a metal-wide band gapsemiconductor-metal TFT, as described earlier herein. Note that the wideband gap semiconductor does not need to be intentionally doped. Also, itcould be doped uniformly. Thus, the non-uniform doping (e.g., N+/n/N+)is not required.

The TFT select devices 504 each have a channel extension, otherwisereferred to as a gate/channel offset, in this embodiment. In thisexample, the channel extension is at the lower portion of the TFT 504.The channel extension is not a requirement.

The memory layer includes a set of vertical bit lines 530. In oneembodiment, the vertical bit lines 530 are n+ polysilicon. In oneembodiment, the vertical bit lines 530 are p+ polysilicon. In oneembodiment, the vertical bit lines 530 are metal. The choice of materialfor the vertical bit lines 530 may depend on the type of memory cells inuse. The VBL material may be in direct contact with the memory cellswitching material. In other words, the VBL material may form one of theelectrodes of the memory cell. Depending on the memory cell material,its switching properties may be better depending on the choice of theelectrode material, with doping of N+ or P+ type. The choice of VBLmaterial may depend on the properties of memory cell.

For configurations having an N+ VBL, NFET TFT may be more suitable thanPFET, since a TFT S/D of N+ type would make a good electrical contactwith VBL material of the same N+ type of conductivity. In anotherembodiment, the VBL is made of P+ type material. In this case, a TFTPFET may be more suitable, since its S/D of P+ type would make a goodelectrical contact with VBL material of the same P+ type. Thus, thechoice of PFET or NFET may ultimately depend on properties of the memorycell.

In the example depicted in FIG. 12A, the TFT select devices 504 have anupper contact 508 a. The upper contact 508 a may be formed from TiN,SiN, etc. Note that the upper contact 508 a may not be required for atleast some vertical bit line 530 materials. Thus, in some embodiments,the upper contact 508 a is not used.

Interspersed between the vertical bit lines 530 are alternating oxidelayers 534 and word line layers 536. In one embodiment, the word linesare made from TiN. Between the vertical bit lines 530 and the stacks ofalternating oxide layers 534 and word line layers 536 are verticallyoriented layers of reversible resistance switching material 532. In oneembodiment the reversible resistance switching material is made ofHafnium Oxide HfO₂. However, other materials (as described above) canalso be used. Box 540 depicts one example memory element which includesthe reversible resistance switching material 532 sandwiched between aword line 536 and vertical bit line 530. The memory elements arepositioned above, and not in, the substrate.

Directly below each vertical bit line 530 are the vertically orientedTFT select devices 504, each of which comprises (in one exampleembodiment) an n+/n−type/n+ TFT. Each n+ region may be referred to as asource/drain. The upper source/drain is connected to the vertical bitline 530 by an upper contact 508 a. The n−type region may be referred toas a body. The n−type region may serve as the channel of the TFT duringoperation.

Each of the vertically oriented TFT select devices 504 has dielectriclayers 505 on each side. The dielectric layers 505 are oxide, in oneembodiment. In this embodiment, each TFT has two gates. Referring to TFT504 a, there is a gate 507 a to the left and a gate 507 b to the right.

In FIG. 12A, the channel is not extended on the top of the TFT 504. Thatis, the n−type region (or body) of each TFT 504 does not extend past(above in this case) the gate material 522.

The TFT is connected to the global bit line (GBL) 526 by the lowercontact 508 b. The GBL 526 may be formed from metal, heavily dopedpolysilicon, or a combination of layers of metal and heavily dopedpolysilicon. As can be seen, the TFT 504 can be used to connect theglobal bit line GBL (layer 526) with any of the vertical bit lines 530.

The channel extension helps provide for good high voltage operation. Thevertical TFT select devices 504 are able to withstand high voltagedifferences between their source/drain regions. For some operations, arelatively high voltage difference is applied between the global bitline 526 and the word lines. Therefore, a high voltage may resultbetween the two source/drains of an unselected vertically oriented TFTselect device 504. It is important that the vertically oriented TFTselect device 504 does not breakdown. The channel extension preventbreakdown during high voltage operation.

It is also important that the select device does not exhibit highleakage as explained above. The channel extension also helps provide fora low leakage current. Note that GIDL could possibly be a problem whenoperating the vertically oriented TFT select device 504. However, thechannel extension helps reduce GIDL and prevent adverse impact of GIDLon TFT selection device 504 and array operation.

Note that TFT breakdown may represent a catastrophic failure, afterwhich the TFT selection device will cease to operate as transistor. Thismay lead to the failure of the memory chip as a whole.

High GIDL could also damage the TFT due to hot carriers injected to thegate dielectric due to high field in the direction perpendicular to thegate dielectric. This may lead to interface and bulk trap accumulationin the gate dielectric, leading to TFT selection device performancedegradation and reliability issues.

As described below, the memory structure of FIG. 12A is a continuousmesh array of memory elements because there are memory elementsconnected to both sides of the bit lines and memory elements connectedto both sides of the word lines. At the bottom of FIG. 12A, the CMOSsubstrate is depicted. Implemented on the top surface of the CMOSstructure are various metal lines including ML-0, ML-1, and ML-2. Line526 of ML-2 serves as a respective global bit line (GBL). The PillarSelect Layer includes two oxide layers 520, 521 with a gate materiallayer 522 sandwiched there between. The oxide layers 520, 521 can beSiO₂. The metal line ML-2 526 serving as a global bit line can beimplemented of any suitable material, including Tungsten, or Tungsten ona Titanium Nitride adhesion layer or a sandwich of n+ polysilicon onTungsten on Titanium Nitride adhesion layer. Gate material 522 can bepolysilicon, Tungsten (W), Titanium Nitride, Tantalum Nitride, NickelSilicide or any other suitable material. Gate material 522 implementsthe row select lines SG_(x) (e.g., SG₁, SG₂, . . . of FIG. 1), which arelabeled in FIG. 12A as row select lines 507. Portions of the row selectlines may also be referred to a transistor gates.

FIG. 12A shows six row select lines (SG_(x)) 507 in the gate materiallayer 522, each underneath a stack of multiple word lines. As can beseen, each of the row select lines 507 is positioned between twovertically oriented select devices 504, above and not in the substrate.Therefore, each row select line can serve as the gate signal to eitherof the two neighboring vertically oriented TFT select devices 504;therefore, the vertically oriented TFT select devices 504 are said to bedouble gated. Each vertically oriented TFT select device 504 can becontrolled by two different row select lines, in this embodiment.

FIG. 12B is a cross-sectional view of another embodiment of a memorystructure using a vertically oriented TFT select device 504 having thechannel extension is at the lower portion of the TFT select devices 504.This is similar to the TFT 504 discussed in FIG. 11D in combination withthe memory structure of FIG. 6. However, the top 508 a and bottomcontacts 508 b are not depicted in FIG. 12B. The top 508 a and bottomcontacts 508 b may or may not be used, depending on factors such as thematerial selected for the vertical bit lines 530 and global bit line526.

FIG. 12B shows the TFT as an NFET, with vertical bit lines made ofmaterial (e.g., polysilicon) of N+ type. For such a configuration, NFETTFT may be more suitable than PFET, since a TFT S/D of N+ type wouldmake a good electrical contact with VBL material of the same N+ type ofconductivity. In another embodiment, the VBL is made of P+ typematerial. In this case, a TFT PFET may be more suitable, since its S/Dof P+ type would make a good electrical contact with VBL material of thesame P+ type.

As noted, the TFT select devices 504 each have a channel extension,otherwise referred to as a gate/channel offset, in some embodiments.However, the channel extension is not a requirement. In this example,the channel extension is at the lower portion of the TFT select devices504. That is, there is a gate/junction offset at the lower body/sourcejunction, but not at the upper body/drain junction. In one embodiment,the memory elements are FORMED using a forward forming voltage in whichthe global bit line voltage is greater than the selected word linevoltage.

FIG. 12C is a cross-sectional view of another embodiment of a memorystructure using the vertically oriented TFT select device 504 discussedin FIG. 11C and the memory structure of FIG. 6. The TFT select devices504 each have a channel extension, otherwise referred to as agate/channel offset. In this example, the channel extension is at theupper portion of the TFT select devices 504. That is, there is agate/junction offset at the upper body/drain junction, but not at thelower body/source junction. In one embodiment, the memory elements areFORMED using a reverse forming voltage in which the global bit linevoltage is less than the selected word line voltage.

The channel extension is not a requirement. Thus, the verticallyoriented TFT select device 504 discussed in FIGS. 11A and/or 11B1-11B4may also be used with the memory structure of FIG. 6. Also, the deviceis not required to have two gates. Thus, the vertically oriented TFTselect device 504 discussed in FIGS. 11E and/or 11F may also be usedwith the memory structure of FIG. 6.

FIG. 13 is a partial schematic of the memory system of FIGS. 12A, 12B,and 12C depicting the above-described double-gated structure for thevertically oriented TFT select devices 504. Planes 1 and 2 of FIG. 11are the same as in FIG. 1. As can be seen, each local bit line LBL isconnectable to a respective global bit line GBL by two row selectsignals. FIG. 13 shows two transistors connecting to each local bitline. For example, transistor Q₁₁ can connect local bit line LBL₁₁ toglobal bit line GBL₁ in response to row select line SG₁ and transistorQ_(11a) can connect local bit line LBL₁₁ to global bit line GBL₁ inresponse to row select line SG₂. The same structure is used for theother local bit lines depicted in FIG. 13.

FIG. 14 shows another partial schematic also depicting the double-gatedstructure such that each local bit line (LBL1, LBL2, . . . LBL72) areconnected to their respective global bit lines (GBL1, GBL2, . . . GBL72)by any of two respective vertically oriented TFT select devices that arepositioned above the CMOS substrate. As can be seen, while thedouble-gated structure of FIGS. 12A and 12B include positioning thevarious select devices 504 above the substrate, the Row Select LineDrivers providing the row select lines SG₁, SG₂, . . . are positioned inthe substrate. Similarly, the global word lines (e.g., GWL) are positionin a metal layer on the substrate and below the vertically orientedselect devices. Furthermore, as will be explained below, in oneembodiment the Row Select Line Driver uses the appropriate global wordline GWL as an input.

FIG. 15A is a flow chart describing one embodiment for manufacturing aPillar Select Layer having a vertical TFT selection device 504. Thisprocess may be used to form the Pillar Select Layer depicted in FIG.12B. FIGS. 16A-16H show results after various steps. In this embodiment,the vertical TFT selection devices 504 have their channel extensions onthe bottom. The process can be modified to form vertical TFT selectiondevices 504 having their channel extensions on the top. The process canbe modified to form vertical TFT selection devices 504 without channelextensions. The process can be modified to form vertical TFT selectiondevices 504 that are metal-wide band gap semiconductor-metal.

Note that other processes can be used form the vertical TFT selecteddevice 504. In FIG. 15A, the TFT is an embodiment that is N+/n−type/N+.The TFT 504 is not required to be N+/n−type/N+. The process can bemodified for other devices. Thus, the process could be modified to forma vertical TFT selected device 504 such as, P+/p−type/P+, N+/p−type/N+,P+/n−type/P+, N+/intrinsic/N+, P+/intrinsic/P+, etc. In FIG. 12B, theTFT 504 is connected to the vertical bit line 530 without a top contact508 a. Thus, formation of a top contact 508 a is not depicted in thediscussion of FIG. 15A. However, the process can be modified to form atop contact 508 a. In FIG. 12B, the TFT 504 is connected to the globalbit line 526 without a bottom contact 508 b. Thus, formation of a bottomcontact 508 b is not depicted in the discussion of FIG. 15A. However,the process can be modified to form a bottom contact 508 b.

This process can be performed after manufacturing the metal layers andsubstrate layers (e.g., drivers and other logic), and beforemanufacturing the memory layer. The substrate layers, metal layers andmemory layers can be manufactured using other processes known and/ordescribed elsewhere. In step 600, oxide for the lower oxide layer 520 isdeposited above the metal layer. In one embodiment, the metal layer istungsten. For example, Chemical Vapor Deposition (CVD) can be used todeposit SiO₂. In step 602, the oxide is etched. FIG. 16A depicts resultsafter step 602. FIG. 16A shows oxide layer 520 having been depositedover metal 526 and having been etched to form a pattern. The oxide layer520 may be formed such that its height is above the point where thelower source/drain 503 b will eventually start. That is, the oxide 520may be higher than the eventual highest point of the lower S/D 503 b.This will allow the gate to be offset from the lower S/D 503 b. To forma memory array such the one in FIG. 12C, one option is to form an oxidelayer having a lower height. This latter option will allow the gate tobe formed without any offset from the lower S/D 503 b. This latteroption could also be used when forming a TFT 505 having no channelextension at either the top or bottom.

In step 604, n+ wide energy band gap semiconductor is formed over theoxide layer 520. FIG. 16B depicts results after step 604, showing n+wide energy band gap semiconductor 1618 over the oxide layer 520. The n+wide energy band gap semiconductor may be doped in situ or afterdepositing the wide energy band gap semiconductor. Note that if dopingis performed after deposition, other layers could be added prior todoping. In one embodiment, NH₃ plasma treatment is used to reduce seriesresistance (higher N+ doping concentration). In one embodiment, thesource and/or drain regions are exposed to argon (Ar). This may be Arplasma treatment. As non-limiting examples, Ar or N may be used eitherfor in-situ doping or ion implantation. In FIG. 16B (as well as 16C-16H)the diagram is simplified relative to FIG. 16A by not depicting thelower metal layers M0, M1.

In step 606, the n+ wide energy band gap semiconductor 1618 is etchedback. FIG. 16C depicts results after step 606, showing n+ wide energyband gap semiconductor having been etched back such that now there arerecesses 1619 between portions of the oxide layer 520. The n+ wideenergy band gap semiconductor may be etched to a lower height than thefinal body/source junction height to account for diffusion of dopantsduring later process steps, such as anneals. The recesses 1619 may beprovide for an alignment mark for a mask that will be used to etch wideenergy band gap semiconductor that will be the upper source/drains 503 aand bodies 501 of the TFTs 504 (in step 612).

In step 608, an n−type layer of wide energy band gap semiconductor isformed over the lower n+ wide energy band gap semiconductor. One optionis to form this layer without intentionally doping. In step 610, an n+layer of wide energy band gap semiconductor is formed over the n−typelayer. FIG. 16D depicts results after step 610 showing n−type layer 1622and n+ layer 1624. In one embodiment, wide energy band gap semiconductoris deposited for both layers 1622, 1624 without any intentional doping(e.g., intrinsic). Later, an impurity can be introduced to the top layer1624, and optionally, to the middle layer 1622 (for the body). The wideenergy band gap semiconductor that was deposited without any intentionaldoping may end up being n−type. Thus, in one embodiment, the n−type wideenergy band gap semiconductor is formed without intentionally dopingthat layer.

Next, n+ layer 1624 is formed by implanting a dopant using a suitableenergy level. Note that the lower n+ layer of wide energy band gapsemiconductor could be doped after layer 1624 is formed by using asuitable energy level to implant at the appropriate depth. In oneembodiment, NH₃ plasma treatment is used to reduce series resistance(higher N+ doping concentration). In one embodiment, the source and/ordrain regions are exposed to argon (Ar). This may be Ar plasmatreatment. As non-limiting examples, Ar or N may be used either forin-situ doping or ion implantation.

In step 612, etching is performed to form pillars for the vertical TFTselected devices. FIG. 16E depicts results after step 612, showingseveral pillars 1625. Each pillar 1625 has lower n+ region (source 503b), n−type region (body 501), and upper n+ region (drain 503 a). Thelower body/source junction is depicted in its final position in FIG.16E. Note that some mis-registration between the lower n+ region and then−type region, as well as the top n+ region, is not critical. Aspreviously noted, the recesses 1619 may serve as an alignment mark forthe mask that is used to etch these pillars 1625.

In step 614, a gate dielectric is formed. FIG. 16F depicts results afterstep 614 showing the gate dielectric material 1628 over the pillars1625. In one embodiment, the gate dielectric material 1628 is formed byALD of silicon oxide. In one embodiment, the gate dielectric material1628 is formed by ALD of hafnium oxide. In one example implementation,the gate dielectric layer 1628 will be approximately 3 to 10 nanometersthick.

In step 616, material is deposited for the gates. In one embodiment, TiNis deposited. The gate material could be W, as another example. In oneembodiment, the gate material is polysilicon, which may be doped asdeposited or doped later for high conductivity. In step 618, the gatematerial is etched to form the gates. For example, reactive ion etching(RIE) is used. FIG. 16G depicts results after step 618, showing gates507. In this embodiment, each TFT has two gates 507. In anotherembodiment, a TFT has a single gate. In one embodiment, the TiN (orother gate material) is deposited over the gate dielectric material in amore or less conformal layer. Etching back the gate material (e.g., TiN)creates the structure of FIG. 16G. The channel extension is at the lowerportion of the TFTs 504.

In step 620, another layer of oxide is formed. In step 622, the oxide isetched back. FIG. 16H depicts results after step 622, showing upperoxide layer 521. For example, CVD can be used to deposit SiO₂.

FIG. 15B is a flow chart describing one embodiment for manufacturing aPillar Select Layer having a vertical TFT selection device 504. Thisprocess may be used to form a Pillar Select Layer in which the verticalTFT selection devices 504 have their channel extensions on the top.FIGS. 17A-17F depict results after various steps. The process can bemodified to form vertical TFT selection devices 504 having their channelextensions on the bottom. The process can be modified to form verticalTFT selection devices 504 without channel extensions.

In FIG. 15B, the TFT is an embodiment that is N+/n−type/N+. The TFT 504is not required to be N+/n−type/N+. The process can be modified for TFTshaving other conductivity and/or doping concentrations. Thus, theprocess could be modified to form a vertical TFT selected device 504such as, P+/p−type/P+, N+/p−type/N+, P+/n−type/P+, N+/intrinsic/N+,P+/intrinsic/P+, etc. The process can be modified to form vertical TFTselection devices 504 that are metal-wide band gap semiconductor-metal.

The formation of a top contact 508 a is not depicted in the discussionof FIG. 15A. However, the process can be modified to form a top contact508 a. In FIG. 15B, the formation of a bottom contact 508 b is notdepicted. However, the process can be modified to form a bottom contact508 b.

This process can be performed after manufacturing the metal layers andsubstrate layers (e.g., drivers and other logic), and beforemanufacturing the memory layer. The substrate layers, metal layers andmemory layers can be manufactured using other processes known and/ordescribed elsewhere. In step 1502, a wide energy band gap semiconductoris formed over the global bit line 526. This may be in direct contactwith the global bit line 526. Alternatively, one or more other layerscould be between the global bit line 526 and the wide energy band gapsemiconductor. As one example, material for the lower contact 508 b (ifused) may be therebetween.

FIG. 17A depicts results after step 1502. The wide energy band gapsemiconductor has three layers 1718, 1720, 1722, which will serve as thebasis for the source 503 b, body 501, and drain 503 a, respectively. Inone embodiment, the layers 1718, 1722 for the source and drain aredoped. However, doping is not required. The doping may be in situ, orperformed after depositing the wide energy band gap semiconductor. Inone embodiment, NH₃ plasma treatment is used to reduce series resistance(higher N+ doping concentration). In one embodiment, the source anddrain layers 1718, 1722 are exposed to argon (Ar). This may be Ar plasmatreatment. As non-limiting examples, Ar or N may be used either forin-situ doping or ion implantation of the source and/or drain layers1718, 1722.

In step 1504, the wide energy band gap semiconductor is patterned andetched. FIG. 17B depicts results after step 1504, showing severalpillars 1725. Each pillar 1725 has lower n+ region (source 503 b),n−type region (body 501), and upper n+ region (drain 503 a). The lowerbody/source junction is depicted in its final position in FIG. 17B.

In step 1506, oxide for the lower oxide layer 520 is deposited above themetal layer and between the pillars 1725. For example, Chemical VaporDeposition (CVD) can be used to deposit SiO₂. In step 1508, the oxide isetched. FIG. 17C depicts results after step 1508. FIG. 17C shows oxidelayer 520 having been deposited over metal 526 and between the pillars1725. The oxide layer 520 may be formed such that its height is belowthe junction of the body and lower source/drain 503 b. That is, theoxide 520 may be lower than the eventual highest point of the lower S/D503 b. In this technique, a channel extension is not being formed on thelower side of the TFT 504. To form a TFT having a channel extension onthe lower side, one option is to form an oxide layer 520 having a higherheight. This latter option will allow the gate to be formed with achannel offset at the lower S/D 503 b.

In step 1510, a gate dielectric is formed. FIG. 17D depicts resultsafter step 1510, showing the gate dielectric material 1728 over thepillars 1725. In one embodiment, the gate dielectric material 1728 isformed by ALD of silicon oxide. In one embodiment, the gate dielectricmaterial 1728 is formed by ALD of hafnium oxide. In one exampleimplementation, the gate dielectric layer 1728 will be approximately 3to 10 nanometers thick.

In step 1512, material is deposited for the gates. In one embodiment,TiN is deposited. Other materials can be used, including but not limitedto, tungsten and doped polysilicon. In step 1514, the gate material isetched to form the gates. This may be a sidewall spacer etch. Forexample, reactive ion etching (RIE) is used. FIG. 17E depicts resultsafter step 1514, showing gates 507. In this embodiment, each TFT 504 hastwo gates 507. In another embodiment, a TFT 504 has a single gate. Inone embodiment, the TiN is deposited over the gate dielectric material1625 in a more or less conformal layer. Etching back the gate material(e.g., TiN) creates the structure of FIG. 17E. The channel extension isat the upper portion of the TFTs 504. As noted above, the process can bemodified such that no channel extension is formed at the top of the TFT504. The no channel extension at the top can be in combination with nochannel extension at the bottom or with a channel extension at thebottom.

In step 1516, another layer of oxide is formed. In step 1518, the oxideis etched back. FIG. 17F depicts results after step 1518, depictingadditional oxide layer 521.

A vertical TFT selection device with channel extension provides anadditional controlled parameter (channel extension or gate/junctionoffset) as a powerful way of optimizing vertical TFT selection devicetrade-offs (e.g., Ion, Ioff/leakage and Breakdown Voltage), bymodulating the top and bottom gate/junction overlap/offset.

Another advantage of a vertically asymmetrical TFT having channelextension is that it can have a lower aspect ratio than a verticallysymmetrical TFT. As the foregoing indicates, the vertically asymmetricalTFT can be made shorter than a vertically symmetrical TFT withoutsacrificing leakage current or breakdown voltage. Thus, the aspect ratiocan be improved.

FIG. 18 is a flow chart describing one example process for operating thememory device of the embodiment where memory elements are chosen bydriving row select lines on the opposite side of the vertical bit lines.In step 700 of FIG. 18, the unselected word line voltage is applied tothe unselected word lines. In step 702, the unselected bit line voltageis applied to all the global bit lines. In one embodiment, the local bitlines are floated, so they drift toward (or to) the unselected word linevoltage. In step 706, the selected bit line voltage is applied toselected global bit lines. In step 708, the selection signal is appliedto the appropriate row select lines (SG_(x)) on the opposite side of thevertical bit lines for the memory elements that are selected. The signalapplied to the row select lines is the appropriate signal to turn on thevertically oriented TFT select devices 504 in order to connect theglobal bit line to the local bit lines. The row select lines on the sameside of the global bit line as the memory element that is selected willreceive a signal that would not turn on any of the vertically orientedselect devices. In step 712, the selected word line voltage is appliedto selected word lines. Therefore, in step 714 the appropriate memoryoperation is performed. Note that the order of steps depicted in FIG. 18can be changed.

In one embodiment, the process of FIG. 18 is performed by controlcircuitry (such as in FIG. 2) in communication with the global bitlines, the gates of the vertically oriented TFT select devices, and theword lines. The control circuitry applies voltages to the global bitlines, the gates of the vertically oriented TFT select devices, selectedword lines, and unselected word lines to create a forward formingvoltage for memory cells that are selected to undergo forming and toprevent a forming voltage for memory cells that are not to undergoforming, in one embodiment. In this embodiment, the vertically orientedTFT select devices may have the channel extension on the bottom, as inFIG. 12B.

In one embodiment, the control circuitry applies voltages to the globalbit lines, the gates of the vertically oriented TFT select devices,selected word lines, and unselected word lines to create a reverseforming voltage for memory cells that are selected to undergo formingand to prevent a forming voltage for memory cells that are not toundergo forming. In this embodiment, the vertically oriented TFT selectdevices may have the channel extension on the top, as in FIG. 12C.

One embodiment includes a non-volatile storage system, comprising athree dimensional memory array of memory cells, a plurality of wordlines coupled to the memory cells, a plurality of global bit lines, aplurality of vertically oriented bit lines coupled to the memory cells,and a plurality of vertically oriented thin film transistor (TFT) selectdevices. The vertically oriented TFT select devices are coupled betweenthe vertically oriented bit lines and the global bit lines. When thevertically oriented TFT select devices are activated, the verticallyoriented bit lines are in communication with the global bit lines. Eachof the vertically oriented TFT select devices comprises a body formedfrom a wide energy band gap semiconductor.

One embodiment includes a method for forming a non-volatile storagesystem. The method comprises forming a three dimensional memory array ofmemory cells, forming a plurality of word lines coupled to a subset ofthe memory cells, forming a plurality of global bit lines, forming aplurality of vertically oriented bit lines coupled to the memory cells,and forming a plurality of vertically oriented thin film transistor(TFT) select devices. The vertically oriented TFT select devices arecoupled between the vertically oriented bit lines and the global bitlines. When the vertically oriented TFT select devices are activated thevertically oriented bit lines are in communication with the global bitlines. Forming each of the vertically oriented TFT select devicescomprises: forming a body that includes a wide band gap semiconductor,forming a gate, and forming a gate dielectric between the gate and thebody.

One embodiment includes a non-volatile storage system, comprising asubstrate, a three dimensional memory array of ReRAM memory cellspositioned above the substrate, a plurality of word lines coupled to theReRAM memory cells, a plurality of global bit lines, a plurality ofvertically oriented bit lines coupled to the memory cells, and aplurality of vertically oriented thin film transistor (TFT) selectdevices that are above the substrate. The vertically oriented TFT selectdevices are coupled between the vertically oriented bit lines and theglobal bit lines. When the vertically oriented TFT select devices areactivated the vertically oriented bit lines are in communication withthe global bit lines. Each of the vertically oriented TFT select devicescomprises a body formed from an oxide semiconductor. The body extendsbetween a first of the global bit lines and a first of the verticallyoriented bit lines. The body has a sidewall. Each of the verticallyoriented TFT select devices further comprises a gate dielectric on thesidewall of the body and a gate adjacent to the gate dielectric.

Numerous examples were discussed herein in which the TFT 505 was ann+/n−type/n+ device. However, the TFT 504 may have other conductivitiesand other doping concentrations. Other examples include, but are notlimited to, p+/p−type/p+, n+/p−type/n+, and p+/n−type/p+.

The foregoing detailed description has been presented for purposes ofillustration and description. It is not intended to be exhaustive orlimiting to the precise form disclosed. Many modifications andvariations are possible in light of the above teaching. The describedembodiments were chosen in order to best explain the principles of thedisclosed technology and its practical application, to thereby enableothers skilled in the art to best utilize the technology in variousembodiments and with various modifications as are suited to theparticular use contemplated. It is intended that the scope be defined bythe claims appended hereto.

What is claimed is:
 1. A method for forming a non-volatile storage system, the method comprising: forming a three dimensional memory array of memory cells above a substrate; forming a plurality of word lines coupled to a subset of the memory cells; forming a plurality of global bit lines; forming a plurality of vertically oriented bit lines coupled to the memory cells, wherein the vertically oriented bit lines are oriented vertically with respect to the substrate; and forming a plurality of vertically oriented thin film transistor (TFT) select devices, wherein the vertically oriented TFT select devices are oriented vertically with respect to the substrate; wherein forming each of the vertically oriented TFT select devices comprises: forming a first source/drain electrically coupled to a first global bit line of the global bit lines; forming a body that includes a wide band gap semiconductor having an energy band gap greater than 1.1 eV; forming a second source/drain electrically coupled to a first vertically oriented bit line of the vertically oriented bit lines; forming a gate; and forming a gate dielectric between the gate and the body; forming a plurality of select lines, wherein each of the select lines is coupled to the gates of a group of the plurality of vertically oriented TFT select devices; and forming a plurality of select line drivers associated with the plurality of select lines, each of the select line drivers configured to apply a signal to its associated select line to cause a given vertically oriented TFT select device to connect or disconnect its associated vertically oriented bit line to or from its associated global bit line.
 2. The method of claim 1, wherein the forming the body that includes the wide band gap semiconductor comprises forming a region of oxide semiconductor.
 3. The method of claim 1, wherein the forming the body that includes the wide band gap semiconductor comprises forming the body from a metal oxide semiconductor.
 4. The method of claim 1, wherein the forming the body that includes the wide band gap semiconductor comprises forming the body from a material that includes indium.
 5. The method of claim 1, wherein forming the first source/drain and forming the second source/drain comprises: doping the wide band gap semiconductor either N+ or P+ to form the first source/drain and doping the wide band gap semiconductor either N+ or P+ to form the second source/drain to have the same conductivity as the first source/drain, the body having a lower impurity concentration than the first and second source/drains.
 6. The method of claim 1, wherein forming the wide band gap semiconductor comprises: forming the body without providing an impurity to dope the wide band gap semiconductor, wherein the body is intrinsic.
 7. The method of claim 1, wherein forming the first source/drain and forming the second source/drain comprises: forming a first metal region directly connected to the wide band gap semiconductor that forms the body; and forming a second metal region directly connected to the wide band gap semiconductor that forms the body.
 8. The method of claim 7, wherein forming the vertically oriented TFT select device further comprises: forming the body and the gate such that the body extends past the gate to form a channel extension where the gate is not adjacent to the body.
 9. A method for forming a non-volatile storage system, the method comprising: forming a three dimensional memory array of ReRAM memory cells above a substrate; forming a plurality of word lines coupled to a subset of the ReRAM memory cells; forming a plurality of global bit lines; forming a plurality of vertically oriented bit lines coupled to the memory cells, wherein the vertically oriented bit lines are oriented vertically with respect to the substrate; and forming a plurality of vertically oriented thin film transistor (TFT) select devices, wherein the vertically oriented TFT select devices are oriented vertically with respect to the substrate; wherein forming each of the vertically oriented TFT select devices comprises: forming a first source/drain that is an oxide semiconductor and that is electrically coupled to a first global bit line of the global bit lines; forming a body that is the oxide semiconductor; forming a second source/drain that is the oxide semiconductor and is electrically coupled to a first vertically oriented bit line of the vertically oriented bit lines; forming a gate; and forming a gate dielectric between the gate and the body; forming a plurality of select lines, wherein each of the select lines is coupled to the gates of a group of the plurality of vertically oriented TFT select devices; and forming a plurality of select line drivers associated with the plurality of select lines, each of the select line drivers configured to apply a signal to its associated select line to cause a given vertically oriented TFT select device to connect or disconnect its associated vertically oriented bit line to or from its associated global bit line.
 10. The method of claim 9, wherein the forming the body that is the oxide semiconductor comprises forming the body from a wide band gap semiconductor having an energy band gap greater than 1.1 eV.
 11. The method of claim 9, wherein the forming the body that is the oxide semiconductor comprises forming the body from a metal oxide semiconductor.
 12. The method of claim 9, wherein the forming the body that is the oxide semiconductor comprises forming the body from a material that includes indium.
 13. The method of claim 9, wherein forming the first source/drain and forming the second source/drain comprises: doping the oxide semiconductor either N+ or P+ to form the first source/drain and doping the oxide semiconductor either N+ or P+ to form the second source/drain to have the same conductivity as the first source/drain, the body having a lower impurity concentration than the first and second source/drains.
 14. The method of claim 13, wherein forming the vertically oriented TFT select device further comprises: forming the body and the gate such that the body extends past the gate to form a channel extension where the gate is not adjacent to the body.
 15. A method for forming a non-volatile storage system, the method comprising: forming a three dimensional memory array of ReRAM memory cells above a substrate; forming a plurality of word lines coupled to a subset of the ReRAM memory cells; forming a plurality of global bit lines; forming a plurality of vertically oriented bit lines coupled to the memory cells, wherein the vertically oriented bit lines are oriented vertically with respect to the substrate; and forming a plurality of vertically oriented thin film transistor (TFT) select devices, wherein the vertically oriented TFT select devices are oriented vertically with respect to the substrate; wherein forming each of the vertically oriented TFT select devices comprises: forming a first source/drain that is a metal and that is electrically coupled to a first global bit line of the global bit lines; forming a body that is an oxide semiconductor that is in direct contact with the metal of the first source/drain; forming a second source/drain that is a metal that is in direct contact with the oxide semiconductor of the body and is electrically coupled to a first vertically oriented bit line of the vertically oriented bit lines; forming a gate; and forming a gate dielectric between the gate and the body; forming a plurality of select lines, wherein each of the select lines is coupled to the gates of a group of the plurality of vertically oriented TFT select devices; and forming a plurality of select line drivers associated with the plurality of select lines, each of the select line drivers configured to apply a signal to its associated select line to cause a given vertically oriented TFT select device to connect or disconnect its associated vertically oriented bit line to or from its associated global bit line.
 16. The method of claim 15, wherein the forming the body that is the oxide semiconductor comprises forming the body from a wide band gap semiconductor having an energy band gap greater than 1.1 eV.
 17. The method of claim 15, wherein the forming the body that is the oxide semiconductor comprises forming the body from a metal oxide semiconductor.
 18. The method of claim 15, wherein the forming the body that is the oxide semiconductor comprises forming the body from a material that includes indium.
 19. The method of claim 15, wherein the three dimensional memory array is a monolithic three dimensional memory array comprising multiple memory levels above the substrate.
 20. The method of claim 5, wherein forming the vertically oriented TFT select device further comprises: forming the body and the gate such that the body extends past the gate to form a channel extension where the gate is not adjacent to the body. 